A D-band tuner for in-situ noise and power characterization in BiCMOS 55 nm

Bouvot, Simon; Bossuet, Alice; Quémerais, Thomas; Ducournau, Guillaume; Danneville, F.; Lauga-Larroze, Estelle; Gloria, D.; Fournier, Jean‐Michel; Gaquière, C.

doi:10.1109/sirf.2017.7874384

Cited by 9 publications

(5 citation statements)

References 6 publications

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“…The minimal measured Smith‐chart coverage is 70% and its VSWR CC is 3.4 in the whole 1.4–3.2 GHz frequency band (85% FBW), and VSWR CC > 6.2 for the 2–3.2 GHz frequency band. The Smith‐chart coverage, VSWR CC , and FBW of the proposed TLM tuner exceed those reported in [1–5]. It features a size of 0.13 λ × 0.039 λ , which is similar to that of the lumped‐element tuner in [5] (0.08 λ × 0.044 λ ), but smaller than that of the distributed‐element tuners [1] (0.56 λ × 0.307 λ ) and [4] (0.25 λ × 0.25 λ ).…”

Section: Resultsmentioning

confidence: 63%

“…Introduction: Impedance tuners are extensively used to implement tunable matching networks in power amplifiers [1] or antennas [2], and for load-pull or noise-parameter characterisation [3]. To provide flexibility in reconfigurable systems, the tuner should be compact in size, with a wide Smith-chart coverage and large fractional frequency bandwidth (FBW).…”

mentioning

confidence: 99%

“…To provide flexibility in reconfigurable systems, the tuner should be compact in size, with a wide Smith-chart coverage and large fractional frequency bandwidth (FBW). Recent MOS and BiCMOS mm-wave tuners [2,3] exhibit a very small area, but limited (an estimated 35%) Smith-chart coverage. In [4] a small-size, low-power-consumption tuner for RFID applications using varactors is proposed featuring a 50% FBW (1.8-3 GHz), moderate (an estimated 64.3%) Smith-chart coverage, with complete coverage of all reflection coefficients with voltage standing-wave ratio (VSWR) lower than VSWR CC = 4.6 (and any phase) at 2.2 GHz.…”

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confidence: 99%

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Compact, wideband impedance tuner using a three‐line‐microstrip structure

2018

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A novel three-line-microstrip compact impedance tuner is presented. It is based on a multimodal structure wherein six variable capacitances, implemented with two parallel-connected varactors each, create multiple interactions among the three-line-microstrip modes in a reduced circuit area. Experimental results show better-than-70% coverage of the Smith chart in an 85% frequency bandwidth from 1.4 to 3.2 GHz.Introduction: Impedance tuners are extensively used to implement tunable matching networks in power amplifiers [1] or antennas [2], and for load-pull or noise-parameter characterisation [3]. To provide flexibility in reconfigurable systems, the tuner should be compact in size, with a wide Smith-chart coverage and large fractional frequency bandwidth (FBW). Recent MOS and BiCMOS mm-wave tuners [2,3] exhibit a very small area, but limited (an estimated 35%) Smith-chart coverage. In [4] a small-size, low-power-consumption tuner for RFID applications using varactors is proposed featuring a 50% FBW (1.8-3 GHz), moderate (an estimated 64.3%) Smith-chart coverage, with complete coverage of all reflection coefficients with voltage standing-wave ratio (VSWR) lower than VSWR CC = 4.6 (and any phase) at 2.2 GHz. The integrated-passive device tuner using ferroelectric varactors in [5] features small size, and a 40% FBW (2-3 GHz) for an estimated 40% Smith-chart coverage and VSWR CC = 1.8. In [1] a substrate-integrated-cavity technology with piezoelectric actuated dishes is used to achieve a 37% FBW (2.5-3.9 GHz) with a 50% Smith-chart coverage, and VSWR CC = 2 in the 2.53.7 GHz frequency range.Multimodal circuits use multimodal waveguides to allow the propagation of more than one fundamental mode in the same circuit area. The additional modes increase the equivalent electrical length of the circuit, allowing for designs that are more compact. Multimodal circuits have demonstrated compact size and reconfiguration capabilities in structures such as filters [6].In this Letter, a novel varactor-loaded multimodal threeline-microstrip (TLM) structure is used to implement a wideband impedance tuner with a wide, uniform Smith-chart coverage in the whole operation band.

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Section: Resultsmentioning

confidence: 63%

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confidence: 99%

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confidence: 99%

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Compact, wideband impedance tuner using a three‐line‐microstrip structure

2018

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“…In this context, moving the measurement system on chip may overcome some of the current limitations of mm-wave measurements. In this line, several works have reported onwafer (on-silicon) solutions for different measurement systems [4]- [6], such as power detection, load-pulling schemes or even S-Parameters measurement. Nevertheless, the proposed onwafer instruments, although being the subject of major research efforts nowadays, are far from achieving the wideband versatility and precision of external measurement instruments.…”

Section: Introductionmentioning

confidence: 99%

mm-Wave Through-Load Element for On-Wafer Measurement Applications

Margalef‐Rovira

Occello

Saadi³

et al. 2021

IEEE Trans. Circuits Syst. I

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This paper presents an innovative Through-Load element aimed at characterization applications at mm-wave frequencies. The proposed structure can behave as a Through connection or as a 50-Ω load depending on a DC control voltage. Among other potential applications, this system can be used to implement a transfer switch or an attenuator. A demonstrator was fabricated and measured in the STM 55-nm BiCMOS technology. Over a wide bandwidth, from 55 GHz up to 170 GHz, experimental measurements demonstrate a maximum 1.6-dB of insertion loss when behaving as a Through connection and a minimum 14-dB of insertion loss when behaving as a 50-Ω load. In both cases, the return loss is better than 10 dB. The insertion loss at 90 GHz is 0.6 dB for the Through connection and 20 dB for the 50-Ω load connection.

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“…However, part of these solutions has power limitations or are not compatible with silicon technology for Built-in self-test (BIST) application to perform integrated test. Recently, investigations have been done to perform on wafer large signal characterisation, based on load pull methodology setup using in-situ impedance tuner [6] and high frequency power source [7] up to D band frequency range. In addition, to perform on wafer characterisation, integrated power detector is required with high dynamic range and high voltage responsivity to increase measurement accuracy.…”

Section: Introductionmentioning

confidence: 99%

On Wafer Millimetre Wave Power Detection Using a PN Junction Diode in BiCMOS 55 nm for In-Situ Large Signal Characterization

Goncalves¹,

Alaji²,

Gloria³

et al. 2018

2018 48th European Microwave Conference (EuMC)

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This paper describes millimetre wave (mmW) onwafer power detection using dedicated high frequency diode junction with a cutoff frequency (fc) of 400 GHz, integrated in SiGe BiCMOS 55 nm technology from STMicroelectronics. This extraction was performed in order to develop fully integrated power detection for transistor or MMIC large signal characterisation on mmW frequency range above 110 GHz. The power detection is performed by biasing the diode in its forward regime. That allows us to obtain an adjustable voltage responsivity (γ) between 426 V/W and 3836 V/W at 320 GHz on the unmatched diode. In this configuration the corresponding dynamic range can be adjusted depending upon the configuration.

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A D-band tuner for in-situ noise and power characterization in BiCMOS 55 nm

Cited by 9 publications

References 6 publications

Compact, wideband impedance tuner using a three‐line‐microstrip structure

Compact, wideband impedance tuner using a three‐line‐microstrip structure

mm-Wave Through-Load Element for On-Wafer Measurement Applications

On Wafer Millimetre Wave Power Detection Using a PN Junction Diode in BiCMOS 55 nm for In-Situ Large Signal Characterization

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