On Wafer Millimetre Wave Power Detection Using a PN Junction Diode in BiCMOS 55 nm for In-Situ Large Signal Characterization

Abstract

This paper describes millimetre wave (mmW) onwafer power detection using dedicated high frequency diode junction with a cutoff frequency (fc) of 400 GHz, integrated in SiGe BiCMOS 55 nm technology from STMicroelectronics. This extraction was performed in order to develop fully integrated power detection for transistor or MMIC large signal characterisation on mmW frequency range above 110 GHz. The power detection is performed by biasing the diode in its forward regime. That allows us to obtain an adjustable voltage responsivity (γ) between 426 V/W and 3836 V/W at 320 GHz on the unmatched diode. In this configuration the corresponding dynamic range can be adjusted depending upon the configuration.

Design of tunable power detector towards 5G applications

“…The small signal model of the diode was extracted up to 110 GHz 7 and is shown in Figure 2. The R j and C j represent the resistance and capacitance of the junction, R s represents the equivalent series resistance, and C p represents the capacitance of the back‐end structure.…”

“…The R j and C j represent the resistance and capacitance of the junction, R s represents the equivalent series resistance, and C p represents the capacitance of the back‐end structure. The substrate effects represented by R sub , C sub , C ox are negligible up to 110 GHz 7 . In order to use the diodes in simulation, different diode parameters are extracted.…”

“…In order to use the diodes in simulation, different diode parameters are extracted. The elements values of the diodes model (of L1N1 and L2N5) were extracted for three biasing currents (0.1, 1, 10) μA using the same method proposed in 7 …”

mm-Wave Through-Load Switch for in-situ Vector Network Analyzer on a 55-nm BiCMOS Technology

“…Another issue linked to mm-wave measurements is linked to the insertion loss of the cable and coplanar probe connecting the source (the VNA) and on-wafer pads. This limits the overall directivity of the system and constitutes an issue for load-pull measurements [7]. In this scenario, together with the development of nanometric technologies, some authors proposed the integration of in-situ measurement setups, such as Vector Network Analyzers (VNAs) (i.e.…”