A CPU on a plastic film substrate

Takayama, Toru; Ohno, Yuichiro; Goto, Y.; Machida, Akio; Fujita, Masashi; Maruyama, J.; Kimura, Kiyoshi; Koyama, Jun; Yamazaki, Shunpei

doi:10.1109/vlsit.2004.1345496

Cited by 24 publications

(15 citation statements)

References 2 publications

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“…The integration of RF ICs on plastic substrates is a useful technology for RF ID [1]- [2] and wireless display applications. Plastic substrates are not very lossy and are highly insulating (resistivity ~10 8 -10 9 Ω-cm) -this is ideal for RF IC integration.…”

Section: Introductionmentioning

confidence: 99%

Low Noise and High Gain RF MOSFETs on Plastic Substrates

Kao

Chin

Huang

et al. 2005

IEEE MTT-S International Microwave Symposium Digest, 2005.

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A low minimum noise figure (NF min ) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 µm RF MOSFETs on plastic, made by substrate thinning (~30 µm), transfer and bonding. The performance can be further improved to 0.96 dB NF min and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate.

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Section: Introductionmentioning

confidence: 99%

Low Noise and High Gain RF MOSFETs on Plastic Substrates

Kao

Chin

Huang

et al. 2005

IEEE MTT-S International Microwave Symposium Digest, 2005.

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“…25) These properties are closely related to product performance. For example, since the early development stage, the TFT 15,16) application was focused on LCD pixel driving. The lowtemperature glass was the substrate of choice.…”

Section: Comparison Of Devices Materials and Fabrication Processesmentioning

confidence: 99%

Thin-Film Transistor and Ultra-Large Scale Integrated Circuit: Competition or Collaboration

Kuo

2008

jjap

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Thin-film transistor (TFT) and ultra-large scale integrated circuit (ULSIC) have been compared and discussed with respect to the development history, technology trends, and applications. Detailed issues on materials, processes, and devices in the largearea TFT array fabrication and nano-size metal-oxide-semiconductor field effect transistors (MOSFETs) composed ULSIC on large wafers were also examined. The TFT fabrication processes were originally derived from ULSIC. However, there are many unique large-area processes and theories developed during the study of the TFT array fabrication, which can greatly benefit the future large wafer ULSIC production process. Although their future applications will be in different areas, there are opportunities that TFTs can be integrated into ULSIC products to enhance the functions and performance.

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“…This provides lower RF loss than the poorly isolating VLSI-standard Si substrates, and at a lower cost [1]- [3]. Thin-body Si ICs on plastic can be used for Flexible Electronics, RF ID, wireless Displays and System-on-Plastic [2]- [3], [14], since no practical flexible polymer or organic transistors have been demonstrated for the RF regime. Additionally, the RF performance of 0.18 tm thin-body (30 gim) Si MOSFETs can be improved by applying mechanical strain, which narrows the performance gap between them and Ill-V transistors [2]- [3].…”

Section: Introductionmentioning

confidence: 99%

DC-RF Performance Improvement for Strained 0.13 μm MOSFETs mounted on a Flexible Plastic Substrate

Kao

Chin

Liao

et al. 2006

2006 IEEE MTT-S International Microwave Symposium Digest

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By applying 0.7% tensile strain to the flexible die of a 0.13 gm thin-body (40 gm) Si MOSFET mounted on plastic, both the DC and RF performance have been improved. The current Idsat was 14.3% higher, andfT increased from 103 to 118 GHz with NFmi, decreasing from 0.89 to 0.75 dB at 10 GHz.These improvements are comparable with those for SiN-capped 90 nm strained-Si nMOS and consistent with device simulations. The approach has the advantages of better RF passive devices on the insulating plastic substrate and low cost.

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A CPU on a plastic film substrate

Cited by 24 publications

References 2 publications

Low Noise and High Gain RF MOSFETs on Plastic Substrates

Low Noise and High Gain RF MOSFETs on Plastic Substrates

Thin-Film Transistor and Ultra-Large Scale Integrated Circuit: Competition or Collaboration

DC-RF Performance Improvement for Strained 0.13 μm MOSFETs mounted on a Flexible Plastic Substrate

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A CPU on a plastic film substrate

Cited by 24 publications

References 2 publications

Low Noise and High Gain RF MOSFETs on Plastic Substrates

Low Noise and High Gain RF MOSFETs on Plastic Substrates

Thin-Film Transistor and Ultra-Large Scale Integrated Circuit: Competition or Collaboration

DC-RF Performance Improvement for Strained 0.13 &#x003BC;m MOSFETs mounted on a Flexible Plastic Substrate

Contact Info

Product

Resources

About

DC-RF Performance Improvement for Strained 0.13 μm MOSFETs mounted on a Flexible Plastic Substrate