At the contact between drain-line(metal) and pixel-electrode(ITO), the metal contacts with the IT0 frlm through the hole of the SiN film. IT0 film is exposed to plasma during the SiN deposition. The extent of the damage of IT0 surface by plasma exposure changes with the condition of SiN deposition.In this work, we have investigated the relation between the resistivity of the drain-line/pixelelectrode(DL.PE) contact and SiN deposition condition. It is found that the resistivity of the DLJPE contact depends on the deposition temperature. The mechanism of contact resistivity's dependence on the SiN deposition temperature is presumably related to the formation of SiOx and the segregation of indium on SiOx at the Si"0 interface.
We prepare a diffraction grating composed of the gold layer on a glass plate using the gold deposition development in photographic materials and following baking process. A high-resolution image with a spatial resolution of over 4000lines鈭昺m was obtained. A diffraction grating composed of gold particles in a gelatin layer was prepared by development in a gold-thiocyanate complex solution. The grating was then baked to burn out the gelatin layer and fuse the gold particles. The thickness of the grating composed of the gold layer was less than 10nm. After baking the grating had a bright gold luster and showed a clear higher-order diffraction on the reflecting side, while it showed only first-order diffraction before baking. The maximum efficiency of the first-order diffraction beam on the grating before baking was 8.8%. After baking, the maximum efficiency of the reflected diffraction beam was 1.6%. Using this method, it is possible to prepare stable holograms even in severe environments.
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