A comprehensive study on the leakage current mechanisms of Pt/SrTiO3/Pt capacitor

Abstract

Dynamic piezoresponse force microscopy: Spatially resolved probing of polarization dynamics in time and voltage domains J. Appl. Phys. 112, 052021 (2012) Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties Appl. Phys. Lett. 101, 082905 (2012) Safe and consistent method of spot-welding platinum thermocouple wires and foils for high temperature measurements Rev. Sci. Instrum. 83, 084901 (2012) Additional information on J. Appl. Phys.

Growth of highly (110)- and (111)-textured SrTiO3 thin films on Pt(111)/α-Al2O3(0001) substrates by ECR ion beam sputter deposition

“…The J-E characteristics were governed by two types of conduction mechanism models, those being Schottky emission (SE) and Poole-Frenkel (PF) conduction mechanisms. A similar J-E characteristic in the Pt/STO/Pt structure was also reported by Mojarad et al [23]. At low applied electric fields, the leakage current densities of both samples were almost the same and slightly increased within a magnitude order of 10 À 7 A/cm 2 .…”

“…5. This implied that the electrons moved through the bulk insulator by hopping between localized stated, which arose from the oxygen vacancies within the film [23,26]. The larger leakage current density of the highly (111)-textured STO films was explained by the role of grain size and grain boundary according to the report of Rozier et al which stated that the grain boundaries could suppress the leakage current of the films [27].…”

SrTiOx for sub-20nm DRAM technology nodes—Characterization and modeling

“…For this reason the "background" fixed positive charge (Fig. 4), introduced following [10], results in lower measured ε; we, however, find it is not strictly necessary to explain our observations. At low biases, the high-density states close to the interface align with the electrode Fermi level (Fig.…”

Anomalous resistive switching phenomenon

“…(2), the current characteristics in metal oxides can be accurately modeled. 30 However, in order to model the ARS behavior of SrTiO 3 , an additional mechanism must be added into Eq. (2).…”

“…6 for P injection assuming u T ¼ 0:6 eV and V 0 ¼ 1 eV. 30 Fig. 7(b) illustrates the movement of oxygen vacancies through the bulk at different voltage biases.…”