A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects

Syamal, Binit; Zhou, Xing; Chiah, Siau Ben; Jesudas, Anand Mulagumoottil; Arulkumaran, S.; Ng, Geok Ing

doi:10.1109/ted.2016.2533165

Cited by 37 publications

(11 citation statements)

References 32 publications

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“…Traps arising from defects in the AlGaN/GaN heterostructure are responsible for current degradation, threshold voltage shift, and current collapse which limit the RF power and switching performance. 9) Therefore, it is necessary to investigate the hetero-interface trapping effects in the transferred GaN HEMTs on CVD-diamond. Frequency-dependent conductance (G-f ) analysis near the gate depletion bias is generally employed to estimate the trap densities at the AlGaN/GaN channel interface.…”

mentioning

confidence: 99%

Investigations of temperature-dependent interface traps in AlGaN/GaN HEMT on CVD-diamond

Ranjan¹,

Arulkumaran²,

Ng³

2019

Appl. Phys. Express

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In this paper we report, for the first time, the investigation of hetero-interface trapping characteristics in AlGaN/GaN with a high-electron-mobility transistor (HEMT) on a CVD-diamond using the conductance method at different temperatures (25 °C to 200 °C). Fast traps with time constants from 0.16 to 10.01 μs were identified to be the dominating traps at the AlGaN/GaN hetero-interface. The density of the traps (DT) was found to increase with temperature and was attributed to the excitation of deeper traps in the bandgap at elevated temperatures. Finally, temperature-dependent pulsed IDS–VDS measurements were taken to correlate the DT behaviour and current collapse in the device.

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confidence: 99%

Investigations of temperature-dependent interface traps in AlGaN/GaN HEMT on CVD-diamond

Ranjan¹,

Arulkumaran²,

Ng³

2019

Appl. Phys. Express

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“…It is counted on that the donor on the surface has a great impact on the formation of twodimensional electron gas layer (2DEG) without any deliberated external doping. Moreover, various of the traps have drawbacks in GaN HEMT structure such as kink effect, drain and gate lags [5,6,7]. Considering the reliability of the power devices, the stability of the threshold voltage is key matter, therefore, it is significantly important to understanding which sort of trap is responsible for the shift in threshold voltage to characterize [8,9].…”

Section: Introductionmentioning

confidence: 99%

The impact of electrothermal stress on threshold voltage drift of gan and SIC cascode devices

Gunaydin

Jahdi

Yuan

et al. 2022

11th International Conference on Power Electronics, Machines and Drives (PEMD 2022)

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Gallium Nitride (GaN) and Silicon Carbide (SiC) power cascode devices both take advantage of a low-voltage enhancementmode Silicon power MOSFET coupled with a high-voltage depletion-mode GaN HEMT or SiC JFET to realize high switching frequencies with the intention of avoiding charge trapping and threshold voltage drift in the gate oxide traps of enhancementmode SiC MOSFETs. Nevertheless, in this paper it is shown that SiC and GaN Cascodes will also suffer from the gate threshold voltage drift when subjected to significant electrothermal stress. This is partly due to the natural drift of threshold voltage in the gate, and partly due to the impact of the leakage current by the high-voltage device. The threshold voltage drift can lead to permanent degradations and potential failures, and as such is the subject of this investigation.

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“…Since trapping effects are not included in commercial circuit tools, it is important to develop a methodology to predict this behavior. A physical compact model to distinguish different types of traps and to model gate-lag and drain-lag effects has been demonstrated recently [11].…”

Section: Introductionmentioning

confidence: 99%

Analysis of GaN HEMTs Switching Transients Using Compact Model

Faramehr

Igić

2017

IEEE Trans. Electron Devices

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This paper presents a methodology to model GaN power HEMT switching transients. Thus, a compact model to predict devices' pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching tester to model intrinsic parasitic effects and to analyze power dissipation of GaN power HEMT are proposed and presented. Switching transient including gatelag and drain-lag is predicted for ideal (without trap) and nonideal (with trap) devices. The results are validated by and compared to 2-D finite-element technology computeraided design simulations. The original aim of this exercise is to develop a fast (near-real-time) model which can predict dynamic behavior of single and multiple power GaN HEMTs used for the switching transients of GaN power devices at circuit level.

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A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects

Cited by 37 publications

References 32 publications

Investigations of temperature-dependent interface traps in AlGaN/GaN HEMT on CVD-diamond

Investigations of temperature-dependent interface traps in AlGaN/GaN HEMT on CVD-diamond

The impact of electrothermal stress on threshold voltage drift of gan and SIC cascode devices

Analysis of GaN HEMTs Switching Transients Using Compact Model

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