Investigations of temperature-dependent interface traps in AlGaN/GaN HEMT on CVD-diamond

Ranjan, Kumud; Arulkumaran, S.; Ng, G. I.

doi:10.7567/1882-0786/ab45d2

Cited by 9 publications

(6 citation statements)

References 30 publications

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“…The two peak regions in the G p /ω plots correspondingly indicate the presence of both low frequency (slow traps) and high frequency (fast traps). The exhibited fast traps are associated interface traps of the AlGaN/GaN hetero-interface [15,32], while the observed slow traps are associated with the AlN/GaN interface. The estimated D it is shown in Figure 4b for the as-deposited LTE-AlN MIS-diode, as well as the MIS-diodes with post-gate annealing at 400 • C. The minimum D it were estimated as 7.6 × 10 11 cm −2 eV −1 and 5.0 × 10 11 cm −2 eV −1 for the as-deposited MIS-diode and MIS-diode with post-gate annealing at 400 • C, respectively.…”

Section: Resultsmentioning

confidence: 95%

Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate

et al. 2020

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AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMT) with a low-temperature epitaxy (LTE)-grown single crystalline AlN gate dielectric were demonstrated for the first time and the post-gate annealing effects at 400 °C were studied. The as-deposited LTE-AlN MISHEMT showed a maximum drain current (IDmax) of 708 mA/mm at a gate bias of 4 V and a maximum extrinsic transconductance (gmmax) of 129 mS/mm. The 400 °C annealed MISHEMT exhibited an increase of 15% in gmmax, an order of magnitude reduction in reverse gate leakage and about a 3% suppression of drain current (ID) collapse. The increase of gmmax by post-gate annealing is consistent with the increase of 2DEG mobility. The suppression of ID collapse and the reduction of gate leakage current is attributed to the reduction of interface state density (5.0 × 1011 cm−2eV−1) between the AlN/GaN interface after post-gate annealing at 400 °C. This study demonstrates that LTE grown AlN is a promising alternate material as gate dielectric for GaN-based MISHEMT application.

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Section: Resultsmentioning

confidence: 95%

Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate

et al. 2020

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“…The newly type EMMC configuration, together with diamond capping, is expected to be the final near-junction cooling solution, which will help to realize and develop the high-power compact GaN-based devices [ 24 ]. Ranjan et al first reports on the use of conductance methods to investigate the detection at distinctive temperatures (25–200 °C) of the hetero-contact surface trapping trait in AlGaN/GaN by a high HEMT on CVD diamond [ 25 ]. The main pitfalls at the AlGaN/GaN heterointerface are considered to be fast pitfalls with time constants in the interval length of 0.16 to 10.01 μs.…”

Section: Diamond/gan Hemtsmentioning

confidence: 99%

A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction

Sang

Wang

et al. 2023

Molecules

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Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectronic device technology. This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. The discussion in this paper will provide a new scheme for the improvement of high-temperature diamond-based optoelectronics.

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“…In recent decades, two-dimensional semiconductor structures have been leading the development of optoelectronic and electronic devices with their strong spatial confinement of carriers and the resultant unique optical and electrical properties. − As the thickness of the ultrathin layers decreases down to the atomic level, interfacial regions become very dense to account for a large proportion of the whole structure. Moreover, given the complexity of interfacial problems, including atomic intermixing, , mismatch defects, − and imbalanced strain state, , the interface-induced impact could affect devices on diverse aspects, such as carrier mobility, , interfacial scattering degree, − and band alignment . Consequently, the interfacial status could be of great significance for the properties of various multilayered structures.…”

Section: Introductionmentioning

confidence: 99%

Insights into Growth-Oriented Interfacial Modulation within Semiconductor Multilayers

Zhang

Zhao

et al. 2021

ACS Appl. Mater. Interfaces

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Interfacial engineering plays a crucial role in regulating the quality and property of heterogeneous structures, especially for nanometerscaled devices. However, traditional methods for interfacial modulation (IFM) generally treat all the interfaces uniformly, neglecting the inherent disparities of interfaces like their growth sequence. Herein, it is found that the growthoriented characteristic of IFM strongly determines the main regions where the modulation takes effect. Specifically, in a semiconductor quantum well structure, the arsenic atoms modulated at the well-on-barrier (WoB) interface tend to diffuse into and thus affect the next-grown well layer. In contrast, the arsenic atoms introduced at the barrier-on-well (BoW) interface mainly take effect within the next-grown barrier layer. According to theoretical simulations and electron holography (EH) experiments, the depth of quantum wells and the height of potential barriers are extended by introducing arsenic atoms at WoB and BoW interfaces, respectively. Resultantly, while modulating at the BoW interface has little impact on the photoluminescence (PL) spectrum, applying IFM at the WoB interface could dramatically improve the luminescent intensity (about 30%), which demonstrates the impact of the growth-oriented characteristic. Furthermore, in situ bias EH results indicate that IFM at the WoB interface helps to suppress the quantum-confined Stark effect.

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Investigations of temperature-dependent interface traps in AlGaN/GaN HEMT on CVD-diamond

Cited by 9 publications

References 30 publications

Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate

Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate

A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction

Insights into Growth-Oriented Interfacial Modulation within Semiconductor Multilayers

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