2023
DOI: 10.3390/molecules28031334
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A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction

Abstract: Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semicondu… Show more

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Cited by 4 publications
(1 citation statement)
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“…Various organoaluminum compounds with C,N-chelating ligands have been prepared for the purpose of bonding to aluminum atoms via Al-C covalent bonds and Al-N dative bonds [2][3][4][5][6][7][8][9][10][11][12]. Recently, interest in aluminum nitride (AlN) [13], a form in which aluminum and nitrogen are combined, has been on the rise due to AlN being one of the few materials with both a wide direct bandgap and large thermal conductivity [14][15][16][17][18][19][20]. Group 13 metal nitrides are commonly used in optoelectronics [21][22][23][24][25][26], as well as in high-power and high-frequency electronics [27][28][29][30][31], owing to their small atomic mass, strong interatomic bonds, and simple crystal structure [32].…”
Section: Introductionmentioning
confidence: 99%
“…Various organoaluminum compounds with C,N-chelating ligands have been prepared for the purpose of bonding to aluminum atoms via Al-C covalent bonds and Al-N dative bonds [2][3][4][5][6][7][8][9][10][11][12]. Recently, interest in aluminum nitride (AlN) [13], a form in which aluminum and nitrogen are combined, has been on the rise due to AlN being one of the few materials with both a wide direct bandgap and large thermal conductivity [14][15][16][17][18][19][20]. Group 13 metal nitrides are commonly used in optoelectronics [21][22][23][24][25][26], as well as in high-power and high-frequency electronics [27][28][29][30][31], owing to their small atomic mass, strong interatomic bonds, and simple crystal structure [32].…”
Section: Introductionmentioning
confidence: 99%