A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes

Nsengiyumva, Patrick; Ball, D. R.; Kauppila, J. S.; Tam, Nelson; McCurdy, Mike; Holman, W.T.; Alles, Michael L.; Bhuva, B. L.; Massengill, L.W.

doi:10.1109/tns.2015.2508981

Cited by 59 publications

(12 citation statements)

References 19 publications

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“…In going from a LET of 4.0 MeV-cm 2 /mg to a LET of 17.9 MeV-cm 2 /mg, the total cross-section increased by approximately an order of magnitude. Previous measurements on 16-nm FinFET D flip-flops showed similar trends, with an appreciable increase in cross-section for a similar LET range [14,15]. In those studies, this was contrasted with bulk technologies, which didn't show as dramatic an increase in cross-section in the same LET range.…”

Section: Tamu Experiments and Simulation Analysismentioning

confidence: 68%

Measuring and Modeling Single Event Transients in 12-nm Inverters

Agarwal

Clark

Sciortino

et al. 2022

IEEE Trans. Nucl. Sci.

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In this paper, we present a unique method of measuring SET sensitivity in 12-nm FinFET technology. A test structure is presented that approximately measures the length of SETs using flip-flop shift registers with clock inputs driven by an inverter chain. The test structure was irradiated with ions at LETs of 4.0, 5.6, 10.4 and 17.9 MeV-cm 2 /mg, and the crosssections of SET pulses measured down to 12.7 ps are presented. The experimental results are interpreted using a modeling methodology that combines TCAD and radiation effects simulations to capture the SET physics, and SPICE simulations to model the SETs in a circuit. The modeling shows that only ion strikes on the fin structure of the transistor would result in enough charge collected to produce SETs, while strikes in the sub-fin and substrate do not result in enough charge collected to produce measureable transients. Comparisons of the cumulative cross-sections obtained from the experiment and from the simulations validate the modeling methodology presented.

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Section: Tamu Experiments and Simulation Analysismentioning

confidence: 68%

Measuring and Modeling Single Event Transients in 12-nm Inverters

Agarwal

Clark

Sciortino

et al. 2022

IEEE Trans. Nucl. Sci.

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“…Thus, the FinFET sensitive area is reduced. However, FinFET SET improvement decreases for LET ≥ 10 MeV-cm 2 /mg as shown in [5]. In that same work, it is recommended that radiationhardening techniques should be taken into consideration before FinFET-based circuits are potentially used in space missions Bulk and SOI FinFET SRAM cells have comparable critical charges, but the larger collection volume of the bulk cell may result in upsets for lower linear energy transfer (LET) particles, as well as a larger sensitive area (SEU cross section).…”

Section: Introductionmentioning

confidence: 94%

Active Radiation-Hardening Strategy in Bulk FinFETs

et al. 2020

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“…This can be resolved through a device reboot or data rewriting. However, in devices such as very-large-scale integration (VLSI) devices, small flip-flop errors can cause critical issues [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

The Analysis of SEU in Nanowire FETs and Nanosheet FETs

Kim

Kang

2021

Electronics

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The effects of the single-event upset (SEU) generated by radiation on nanowire field-effect transistors (NW-FETs) and nanosheet (NS)-FETs were analyzed according to the incident angle and location of radiation, by using three-dimensional technology computer-aided design tools. The greatest SEU occurred when the particle was incident at 90°, whereas the least occurred at 15°. SEU was significantly affected when the particle was incident on the drain, as compared to when it was incident on the source. The NS-FETs were robust to SEU, unlike the NW-FETs. This phenomenon can be attributed to the difference in the area exposed to radiation, even if the channel widths of these devices were identical.

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A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes

Cited by 59 publications

References 19 publications

Measuring and Modeling Single Event Transients in 12-nm Inverters

Measuring and Modeling Single Event Transients in 12-nm Inverters

Active Radiation-Hardening Strategy in Bulk FinFETs

The Analysis of SEU in Nanowire FETs and Nanosheet FETs

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