Active Radiation-Hardening Strategy in Bulk FinFETs

Calomarde, Antonio; Rubio, Antonio; Moll, Francesc; Gamiz, F.

doi:10.1109/access.2020.3035974

Cited by 5 publications

(7 citation statements)

References 30 publications

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“…The angle of ion particle strike is normal to the surface, and the LET chosen (0.4 MeV-cm 2 /mg) has been enough lower enough in order to avoid the change of the cell state. Upon increasing the LET, all the results shifts up proportionally, until they reach the switch of the cell [12].…”

Section: Sram Cell Characterizationmentioning

confidence: 95%

“…The spatial and temporal ion track parameters have been selected from [12], with a constant Linear Energy Transfer (LET) along the track, Gaussian spatial distribution, characteristic ion-track radius of the Gaussian function of 10 nm, and for best fit with this technology, the characteristic width, t hi , of the temporal evolution of 0.8 ps has been chosen. The incident angle of the ion has been chosen normal to the surface of silicon, which is the worst-case scenario [20].…”

Section: Simulation Environmentmentioning

confidence: 99%

“…Unlike in MOS transistors, in Bulk FinFET devices when a dense plasma of electron-hole pairs is generated by the ion, the only path to reach the fin from the substrate is the narrow sub-fin region [12]. Reverse-biased pn junctions are among the most efficient regions in collecting charge, thanks to the large depletion region and the high electric field.…”

Section: Sram Cell Characterizationmentioning

confidence: 99%

“…The critical charge Q crit is the minimum charge that must be deposited by a particle strike to cause a circuit malfunction. Because the relationship between the voltage peak value and LET follows a linear rule [12], the critical charge for each point in the previous results can be obtained easily using linear extrapolation.…”

Section: Sram Cell Characterizationmentioning

confidence: 99%

“…A previous study [12] proposed the creation of an internal structure to generate an electrical field that drives the charge generated by the ion track in the FinFET channel, thus satisfactorily mitigating the effect of ionizing radiation. However, this solution is very expensive from a technological point of view because it requires the insertion of complementarily doped regions near the active region of the device, which increases the total area of the circuit.…”

Section: Introductionmentioning

confidence: 99%

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Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact

et al. 2022

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This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel. More than 1700 3D TCAD simulations have been performed to obtain a detailed map of the sensitivity areas in a full cell 6-T SRAM 22 nm bulk-FinFET process. The influence of the well depth on the charge collected by the drain devices of the SRAM cell has been studied, and it has been concluded that the collected charge can be reduced down to 300% simply by modifying the depth of the well, without affecting the performance of the cell. Different PTS layer depths have been analyzed in order to calculate which value minimizes the impact of the charge generated by an ion during its track along the FinFET body. The simulations carried out allow to conclude that the incorporation of a PTS layer not only reduces the leakage current, but also reduces the amount of charge, delivered by the ion, that reaches the drain region. Simulation results also show that the fraction of the charge generated by the ion impact, which is collected by the drain, mainly depends on the depth of the wells, whereas the PTS layer hardly modifies the collected charge.

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Section: Sram Cell Characterizationmentioning

confidence: 95%

Section: Simulation Environmentmentioning

confidence: 99%

Section: Sram Cell Characterizationmentioning

confidence: 99%

Section: Sram Cell Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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