1998
DOI: 10.1016/s0925-9635(98)00189-7
|View full text |Cite
|
Sign up to set email alerts
|

A comparison of experimental and calculated electron-energy loss near-edge structure of carbon, and the nitrides of boron, carbon and silicon using multiple scattering theory

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

2
2
0

Year Published

2000
2000
2017
2017

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 8 publications
(4 citation statements)
references
References 16 publications
2
2
0
Order By: Relevance
“…Hence ELNES probes the local density of unoccupied electronic states. Calculations of ELNES using selfconsistent band theory methods 12,13 and multiple scattering theory [14][15][16] show reasonable overall agreement with available experimental spectra. Specifically, the ELNES of c-BN has been presented by many authors, both theoretically 12,15,16 and experimentally.…”
Section: Introductionsupporting
confidence: 59%
“…Hence ELNES probes the local density of unoccupied electronic states. Calculations of ELNES using selfconsistent band theory methods 12,13 and multiple scattering theory [14][15][16] show reasonable overall agreement with available experimental spectra. Specifically, the ELNES of c-BN has been presented by many authors, both theoretically 12,15,16 and experimentally.…”
Section: Introductionsupporting
confidence: 59%
“…Similar results were observed in energy-loss near-edge structures (ELNES) of carbon, aluminum, and nitrogen K-edges (Figure b–d). The recorded ELNES spectra in the vicinity of the diamond/AlN heterointerface have shown the typical C, Al, and N K-edge structures that have been previously reported for bulk diamond and AlN materials in the literature, confirming a high-quality crystalline heterointerface.…”
Section: Results and Discussionsupporting
confidence: 78%
“…The comparison between SiCN and reference data evidences that the local environment around N-atoms in ABSE and HVNG-derived ceramics is essentially the same of N-atoms in Si 3 N 4 . EELS investigations performed on N-doped carbon compounds [32][33][34] showed that C-N bonds are characterized by p * and r * peaks located at 399 and 408 eV, respectively. None of these characteristic features can be recognized in the present spectra.…”
Section: Resultsmentioning
confidence: 99%