2005
DOI: 10.1016/j.jnoncrysol.2005.03.025
|View full text |Cite
|
Sign up to set email alerts
|

Microstructure evolution of precursors-derived SiCN ceramics upon thermal treatment between 1000 and 1400°C

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

2
45
0
1

Year Published

2006
2006
2018
2018

Publication Types

Select...
5
3

Relationship

0
8

Authors

Journals

citations
Cited by 54 publications
(48 citation statements)
references
References 37 publications
2
45
0
1
Order By: Relevance
“…61 In the Raman spectrum of the residue, two bands are observed at 1337 and 1595 cm −1 , which are consistent with the Raman spectrum of amorphous carbon. 62,63 The XRD pattern of the pyrolyzed residue is shown in Fig. 7.…”
Section: Characterizations Of the Residue Pyrolyzed At 1700mentioning
confidence: 99%
“…61 In the Raman spectrum of the residue, two bands are observed at 1337 and 1595 cm −1 , which are consistent with the Raman spectrum of amorphous carbon. 62,63 The XRD pattern of the pyrolyzed residue is shown in Fig. 7.…”
Section: Characterizations Of the Residue Pyrolyzed At 1700mentioning
confidence: 99%
“…The Si-N and C-C bonds dominate all the structures, with the existence of very small amount of Si-C bonds. According to neutron scattering results (Gregori et al, 2005), Si-atoms are bonded to N-atoms while the signal corresponding to the Si-C atomic pair distance is not clearly observed. However, the electron energy-loss spectroscopy (EELS) data of the Si-L ionisation edge indicates the presence of both Si-N and Si-C bonding (Gregori et al, 2005), therefore, a fraction of C-atoms is incorporated into the Si-based network.…”
Section: Resultsmentioning
confidence: 92%
“…According to neutron scattering results (Gregori et al, 2005), Si-atoms are bonded to N-atoms while the signal corresponding to the Si-C atomic pair distance is not clearly observed. However, the electron energy-loss spectroscopy (EELS) data of the Si-L ionisation edge indicates the presence of both Si-N and Si-C bonding (Gregori et al, 2005), therefore, a fraction of C-atoms is incorporated into the Si-based network. It suggests the formation of a microstructure where amorphous carbon together with a few amorphous Si-C regions is interconnected in between an amorphous Si 3 N 4 phase.…”
Section: Resultsmentioning
confidence: 92%
“…33 The Raman spectrum of the residue exhibits two bands at 1337 and 1595 cm À1 , which are attributable to amorphous carbon. 34,35 Figure 8 shows the XRD pattern of the pyrolyzed residue. The XRD pattern of the residue is consistent with that of crystalline AlN, 36 and no reflection due to crystalline BN phase is observed.…”
Section: Resultsmentioning
confidence: 99%