A comparative study of the on-off switching behavior of metal-insulator-metal antifuses

Li, W.T.; McKenzie, David R.

doi:10.1109/55.843155

Cited by 11 publications

(5 citation statements)

References 14 publications

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“…It was found that an amorphous silicon antifuse, once programmed, can switch back to the off-state during later operation. This kind of on-off switching behavior, which was called switch-off, has also been observed for the SiO X , SiN X , NO and AlN-based metal-to-metal antifuse [1,4,7,16,[19][20][21]. Switch-off is highly undesirable, as it results in the failure of the antifuse device.…”

Section: Introductionmentioning

confidence: 75%

“…The programmed antifuses had very low resistances of less than 50 Ω. Then, the maximum current limit was increased to three times the programming current; when the voltage exceeded a certain voltage value, a transition was made to a higher resistance state for the programmed Al/α-Si:H/Al antifuse, which was called switch-off, as shown in Figure 5a [19,21]. However, switch-off did not occur for the programmed Al/α-Si:H,N/α-Si:H/Al (N-5min) antifuse, and it still exhibited a linear ohmic characteristic, with a little lower resistance (about 24 Ω), as shown in Figure 5b.…”

Section: Switch-off Behavior Of the Amorphous Silicon Antifusesmentioning

confidence: 99%

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The Effect of the Dielectric Layer with Surface Plasma Treatment on Characteristics of Amorphous Silicon Antifuse

et al. 2022

Electronics

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With the advantages of lower capacitance, faster operation and smaller size, the amorphous silicon antifuse is very promising for high-speed and high-density FPGA. However, the leakage current of the conventional amorphous silicon antifuse in the off-state is high, which decreases its performance and reliability. Although the leakage current of the SiNX or SiOX antifuse is small, the proper thickness of the dielectric layer is not easily controlled by PECVD processes. In addition, the highly undesirable switch-off behavior is common to almost all metal-to-metal antifuse structures. Focusing on the study of amorphous silicon multilayer dielectric structures, a novel antifuse with the structure of Al/α-Si:H,N/α-Si:H/Al was proposed, which was manufactured by nitrogen plasma treatment for an α-Si:H film surface. Through surface plasma treatment, the hydrogen content of the dielectric layer is stable, the film surface is smoother, the leakage current is reduced, the switch-off behavior is eliminated, the programming voltage is more concentrated and the on-state resistance distribution is more compact. The results demonstrated that surface plasma treatment with proper time for the dielectric layer could significantly improve the performance and reliability of the Al/α-Si:H,N/α-Si:H/Al antifuse. Furthermore, the fabrication process of the α-Si:H,N/α-Si:H structure has excellent compatibility, controllability and simplicity.

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Section: Introductionmentioning

confidence: 75%

Section: Switch-off Behavior Of the Amorphous Silicon Antifusesmentioning

confidence: 99%

The Effect of the Dielectric Layer with Surface Plasma Treatment on Characteristics of Amorphous Silicon Antifuse

et al. 2022

Electronics

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“…The bumps might be ascribed to trapped gas bubbles released during the formation of the filamentary conduction pattern. 27,28 In Ref. 28, the correlation between electrode deformations and leakage sites has been clearly established.…”

Section: Analysis Of the Multifilamentary Conduction Patternmentioning

confidence: 99%

Degradation analysis and characterization of multifilamentary conduction patterns in high-field stressed atomic-layer-deposited TiO2/Al2O3 nanolaminates on GaAs

Miranda

Suñé

Das

et al. 2012

Journal of Applied Physics

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Articles you may be interested inLow-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si J. Vac. Sci. Technol. B 33, 01A101 (2015); 10.1116/1.4895010 Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition J. Vac. Sci. Technol. A 33, 01A116 (2015); 10.1116/1.4900935 X-ray reflectivity characterization of atomic layer deposition Al2O3/TiO2 nanolaminates with ultrathin bilayers J. Vac. Sci. Technol. A 32, 01A111 (2014); 10.1116/1.4833556 Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al 2 O 3 , HfO 2 , and nanolaminates on different silicon substrates J. Vac. Sci. Technol. B 29, 01AA07 (2011); 10.1116/1.3532544 Plasma-assisted atomic layer deposition of TiN / Al 2 O 3 stacks for metal-oxide-semiconductor capacitor applicationsIn this paper, the effects of applying a high-field electrical stress on TiO 2 /Al 2 O 3 nanolaminates grown by atomic layer deposition onto a p-type GaAs substrate are investigated. First, it is shown that the current-time (I-t) characteristic of the devices during a constant voltage stress follows the extended Curie-von Schweidler law for dielectric degradation. The application of voltage sweeps from negative to positive bias and back also reveals an hysteretic behavior of the current-voltage (I-V) characteristic typical of the resistive switching mechanism ocurring in these and others high permittivity oxide films. Second, we show that after the detection of the breakdown event the capacitors exhibit a random spot pattern on the top metal electrode (Al) associated with the generation of multifilamentary conduction paths running across the insulating film. The number of generated spots depends on the magnitude of the electrical stress and for a sufficiently large density, it is possible to demonstrate that they are spatially uncorrelated. The analysis is carried out using spatial statistics techniques such as the intensity plot, the interspot distance histogram, and the pair correlation function. V C 2012 American Institute of Physics. [http://dx.

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“…A reliable antifuse requires a very high resistance or low leakage current in the off-state before programming, and a permanent low resistance in the on-state after programming. Metal-insulator-metal antifuses made of dielectrics such as oxide, silicon nitride, or amorphous silicon are very common and have been extensively studied, [5][6][7][8][9] whereas the antifuses with dielectrics of high-κ material are less discussed and reported in the literature. In this work, we used Atomic Layer Deposition(ALD) Al 2 O 3 as dielectric which proved to show low leakage current due to its high quality and large bandgap, low on-state resistance was also achieved by taking advantage of current overshoot in our specific structure.…”

mentioning

confidence: 99%

A High Reliable High-κ Antifuse Programmed by Intrinsic Overshoot Current

Tian¹,

Li²,

Li³

et al. 2018

ECS J. Solid State Sci. Technol.

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In this paper, we fabricated a W/Al 2 O 3 /Ti metal-insulator-metal (MIM) antifuse one-time programmable memory. A large current overshoot was observed during the dielectric breakdown, which generated a strong conductive filament and resulted in extremely low on-state resistance. The performance of this Al 2 O 3 -based antifuse has been demonstrated with an ultra large ON/OFF window on the order of 10 12 . Both breakdown voltage and on-state resistance exhibit excellent uniformity, the off-state lifetime is projected to be 1591 years at 2 V, and the on-state exhibits a reliable filament that is difficult to rupture.

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A comparative study of the on-off switching behavior of metal-insulator-metal antifuses

Cited by 11 publications

References 14 publications

The Effect of the Dielectric Layer with Surface Plasma Treatment on Characteristics of Amorphous Silicon Antifuse

The Effect of the Dielectric Layer with Surface Plasma Treatment on Characteristics of Amorphous Silicon Antifuse

Degradation analysis and characterization of multifilamentary conduction patterns in high-field stressed atomic-layer-deposited TiO2/Al2O3 nanolaminates on GaAs

A High Reliable High-κ Antifuse Programmed by Intrinsic Overshoot Current

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