Degradation analysis and characterization of multifilamentary conduction patterns in high-field stressed atomic-layer-deposited TiO2/Al2O3 nanolaminates on GaAs

Abstract

Articles you may be interested inLow-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si J. Vac. Sci. Technol. B 33, 01A101 (2015); 10.1116/1.4895010 Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition J. Vac. Sci. Technol. A 33, 01A116 (2015); 10.1116/1.4900935 X-ray reflectivity characterization of atomic layer deposition Al2O3/TiO2 nanolaminates with ultrathin bilayers J. Vac. Sci. Technol. A 32, 01A111 (2014); 10.1116/1.4833556 Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al 2 O 3 , HfO 2 , and nanolaminates on different silicon substrates J. Vac. Sci. Technol. B 29, 01AA07 (2011); 10.1116/1.3532544 Plasma-assisted atomic layer deposition of TiN / Al 2 O 3 stacks for metal-oxide-semiconductor capacitor applicationsIn this paper, the effects of applying a high-field electrical stress on TiO 2 /Al 2 O 3 nanolaminates grown by atomic layer deposition onto a p-type GaAs substrate are investigated. First, it is shown that the current-time (I-t) characteristic of the devices during a constant voltage stress follows the extended Curie-von Schweidler law for dielectric degradation. The application of voltage sweeps from negative to positive bias and back also reveals an hysteretic behavior of the current-voltage (I-V) characteristic typical of the resistive switching mechanism ocurring in these and others high permittivity oxide films. Second, we show that after the detection of the breakdown event the capacitors exhibit a random spot pattern on the top metal electrode (Al) associated with the generation of multifilamentary conduction paths running across the insulating film. The number of generated spots depends on the magnitude of the electrical stress and for a sufficiently large density, it is possible to demonstrate that they are spatially uncorrelated. The analysis is carried out using spatial statistics techniques such as the intensity plot, the interspot distance histogram, and the pair correlation function. V C 2012 American Institute of Physics. [http://dx.

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