Using a photoalignment technique with a sulphonic azo-dye as the surfactant aligning material, we fabricated electrically tunable liquid crystal q-plates with topological charge 0.5, 1.5 and 3 for generating optical vortex beams with definite orbital angular momentum (OAM) 1,3 and 6 per photon (in units of ¯h), respectively. We carried out several tests on our q-plates, including OAM tomography, finding excellent performances. These devices can have useful applications in general and quantum optics.

This study reports the development of copper(I) thiocyanate (CuSCN) hole-transport layers (HTLs) processed from aqueous ammonia as a novel alternative to conventional n-alkyl sulfide solvents. Wide bandgap (3.4–3.9 eV) and ultrathin (3–5 nm) layers of CuSCN are formed when the aqueous CuSCN–ammine complex solution is spin-cast in air and annealed at 100 °C. X-ray photoelectron spectroscopy confirms the high compositional purity of the formed CuSCN layers, while the high-resolution valence band spectra agree with first-principles calculations. Study of the hole-transport properties using field-effect transistor measurements reveals that the aqueous-processed CuSCN layers exhibit a fivefold higher hole mobility than films processed from diethyl sulfide solutions with the maximum values approaching 0.1 cm2 V−1 s−1. A further interesting characteristic is the low surface roughness of the resulting CuSCN layers, which in the case of solar cells helps to planarize the indium tin oxide anode. Organic bulk heterojunction and planar organometal halide perovskite solar cells based on aqueous-processed CuSCN HTLs yield power conversion efficiency of 10.7% and 17.5%, respectively. Importantly, aqueous-processed CuSCN-based cells consistently outperform devices based on poly(3,4-ethylenedioxythiophene) polystyrene sulfonate HTLs. This is the first report on CuSCN films and devices processed via an aqueous-based synthetic route that is compatible with high-throughput manufacturing and paves the way for further developments

Here we report the investigation of controlled PbI2 secondary phase formation in CH3NH3PbI3 (MAPI) photovoltaics through post-deposition thermal annealing, highlighting the beneficial role of PbI2 on device performance. Using high-resolution transmission electron microscopy we show the location of PbI2 within the active layer and propose a nucleation and growth mechanism. We discover that during the annealing that PbI2 forms mainly in the grain boundary regions of the MAPI films and that at certain temperatures the PbI2 formed can be highly beneficial to device performance – reducing current–voltage hysteresis and increasing the power conversion efficiency. Our analysis shows that the MAPI grain boundaries as susceptible areas that, under thermal loading, initiate the conversion of MAPI into PbI2

The thickness of the photoactive layer is a key parameter for optimization of photovoltaic power conversion efficiency (PCE), yet its impact on charge extraction and recombination hasn’t been fully understood...

Recombination via subgap trap states is considered a limiting factor in the development of organometal halide perovskite solar cells. Here, the impact of active layer crystallinity on the accumulated charge and opencircuit voltage (V oc ) in solar cells based on methylammonium lead triiodide (CH 3 NH 3 PbI 3 , MAPI) is demonstrated. It is shown that MAPI crystallinitycan be systematically tailored by modulating the stoichiometry of the precursor mix, where small quantities of excess methylammonium iodide (MAI) improve crystallinity, increasing device V oc by ≈200 mV. Using in situ differential charging and transient photovoltage measurements, charge density and charge carrier recombination lifetime are determined under operational conditions. Increased V oc is correlated to improved active layer crystallinity and a reduction in the density of trap states in MAPI. Photoluminescence spectroscopy shows that an increase in trap state density correlates with faster carrier trapping and more nonradiative recombination pathways. Fundamental insights into the origin of V oc in perovskite photovoltaics are provided and it is demonstrated why highly crystalline perovskite films are paramount for high-performance devices.