A comparative study of oxygen/organosilicon plasmas and thin SiOxCyHz films deposited in a helicon reactor

Aumaille, K.; Vallée, C.; Granier, A.; Goullet, Antoine; Gaboriau, Freddy; Turban, G.

doi:10.1016/s0040-6090(99)00883-4

Cited by 125 publications

(99 citation statements)

References 19 publications

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“…In Fig. 2, the infrared spectra of the deposited films have been reported as a function of the O 2 /HMDSO ratio, together with the bonds attribution [2,3]. It can be observed that the films contain carbon for O 2 /monomer ratio lower than 9.…”

Section: Experimental and Resultsmentioning

confidence: 94%

“…However, the major concern is about their poor gas barrier performance, which ranges from hundreds to thousands cm 3 /m 2 day atm (in the case of noncondensable gases), depending on the polymer thickness and chemical structure. SiO x coatings provide superior barrier performance with respect to all plastic-composite materials, besides reducing environmental concerns, as they are recyclable.…”

Section: Introductionmentioning

confidence: 99%

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Diagnostics and insights on PECVD for gas-barrier coatings

Creatore

Palumbo

d’Agostino

2002

Pure and Applied Chemistry

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In this work, we report on our last results concerning the polyethyleneterephtalate barrier performance optimization as a function of the chemistry of the SiO x coating, deposited by means of hexamethyldisiloxane/oxygen-fed plasmas ignited in an RF capacitively coupled parallel plates reactor. The influence of the gas feed composition and power on the plasma phase/coating chemistry and on the O 2 gas transmission rate has been investigated. The plasma phase has been studied by means of Fourier transform infrared absorption (FT-IR) and optical emission spectroscopies (OES), and the results have been coupled to the film chemistry investigated by means of FT-IR spectroscopy. These techniques show excellent potentialities in the correlation of the plasma phase and film chemistries with the barrier properties of the SiO x -coated polymer, especially when a very good barrier level is required.

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Section: Experimental and Resultsmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Diagnostics and insights on PECVD for gas-barrier coatings

Creatore

Palumbo

d’Agostino

2002

Pure and Applied Chemistry

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“…Further conclusion on the properties of the SiO 2 films can be drawn from the position of the AS mode in the spectrum. Its shift to lower wavenumbers can be related to several phenomena like carbon contamination [30], oxygen deficiency [31,32] and material densification [33]. Finally, these effects result in lower stoichiometry of the SiO x .…”

Section: Chemical Compositionmentioning

confidence: 99%

Tetrakis(trimethylsilyloxy)silane for nanostructured SiO2-like films deposited by PECVD at atmospheric pressure

Schäfer

Hnilica

Šperka

et al. 2016

Surface and Coatings Technology

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a b s t r a c t a r t i c l e i n f oPlasma enhanced chemical vapor deposition (PECVD) from tetrakis(trimethylsilyloxy)silane (TTMS) has been studied at atmospheric pressure. TTMS has been chosen because of its unique 3D structure with potential to form nano-structured organosilicon polymers. Despite the widespread surveying of various silicon-organic molecules for PECVD, the use of TTMS in AP-PECVD has not been investigated deeper yet. PECVDs have been performed with two different plasma jets. While they are alike regarding the geometry and injection of TTMS, they differ in input power and excitation frequency. The radiofrequency plasma jet operates at lower power densities as compared to the microwave plasma jet. Despite this all the deposited films exhibit similar chemical properties resembling that of silicon dioxide (Si:O = 1:2) with carbon content below 5%. The films demonstrate a broad variety of morphologies from compact smooth films to nano-dendritic 3D structures depending on the particular process.

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“…Studies of plastically densified SiO 2 showed the shift of Si-O-Si stretching peak to higher wavenumbers with increased film density [26]. Some authors relate the absorption in the range 1000-1100 cm −1 to Si-O-C groups [27,28,29] and Aumaille et al observed downshift of this peak with increased organic content in the HMDSO/O 2 deposited films [30]. The results of RBS/ERDA analyses showed that the carbon content decreased with temperature from 23 to 2.5 % ( figure 3) and the density increased from 1.0 to 2.0 g cm −3 (figure 4).…”

Section: Chemical Structure and Composition Of Filmsmentioning

confidence: 99%

Deposition of hard thin films from HMDSO in atmospheric pressure dielectric barrier discharge

Trunec¹,

Zajı́čková²,

Buršı́ková³

et al. 2010

J. Phys. D: Appl. Phys.

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To cite this version:DAbstract. The atmospheric pressure dielectric barrier discharge burning in nitrogen with small admixture of hexamethyldisiloxane (HMDSO) was used for the deposition of thin organosilicon films. The thin films were deposited on glass, silicon and polycarbonate substrates, the substrate temperature during the deposition process was elevated up to values within the range 25 • C -150 • C in order to obtain hard SiO x -like thin films. The properties of the discharge were studied by means of optical emission spectroscopy and electrical measurements. The deposited films were characterised by Rutherford backscattering and elastic recoil detection methods, x-ray photoelectron spectroscopy, infrared spectroscopy measurements, ellipsometry and depth sensing indentation technique. It was found that the films properties depend significantly on substrate temperature at deposition. An increase of substrate temperature from 25 • C to 150 • C leads to an increase of film hardness from 0.4 GPa to 7 GPa and the film chemical composition changes from CH x Si y O z to SiO x H y . The films were transparent in visible range.

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A comparative study of oxygen/organosilicon plasmas and thin SiOxCyHz films deposited in a helicon reactor

Cited by 125 publications

References 19 publications

Diagnostics and insights on PECVD for gas-barrier coatings

Diagnostics and insights on PECVD for gas-barrier coatings

Tetrakis(trimethylsilyloxy)silane for nanostructured SiO2-like films deposited by PECVD at atmospheric pressure

Deposition of hard thin films from HMDSO in atmospheric pressure dielectric barrier discharge

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