A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs

Munteanu, Daniéla; Moreau, Mathieu; Autran, Jean‐Luc

doi:10.1080/08927020902801548

Cited by 3 publications

(3 citation statements)

References 25 publications

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“…In other words, the transconductance is almost flat. The same behavior was seen in UltraThin Independent Double Gate MOSFET in Munteanu's work [13].…”

Section: Resultssupporting

confidence: 61%

“…The main advantage of this architecture is that it offers a reinforced electrostatic coupling between the conduction channel and the gate electrode. A double gate structure can efficiently sandwich the semiconductor element playing the role of the transistor channel [13]. Recently, double gate structures with independent gate devices have offered additional advantages and challenges [2,6,[14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

Oubram¹,

Gaggero‐Sager²,

Bassam³

et al. 2010

PIER

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Abstract-The objective of this work is to analyze electronic transport phenomena, due to ionized impurity scattering in δ-MIGFET (Delta-Multiple Independent Gate Field Effect Transistor). In this work, we report theoretical results for electronic transport in a delta-MIGFET using the device electronic structure and analytical expression of mobility and conductivity. The results show that the analytical mobility and conductivity are a good way to analyze transport in this device. We find the relative mobility as a linear and increasing function in different modes; also, we find transconductance as an almost flat function in all the evaluated interval. Finally, we analyze the differential capacitance and resistivity, and we report regions where this device is operating in digital and analogue mode. These regions are delimited in terms of intrinsic and extrinsic parameters of this device in symmetrical mode.

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“…In other words, the transconductance is almost flat. The same behavior was seen in UltraThin Independent Double Gate MOSFET in Munteanu's work [13].…”

Section: Resultssupporting

confidence: 61%

Section: Introductionmentioning

confidence: 99%

Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

Oubram¹,

Gaggero‐Sager²,

Bassam³

et al. 2010

PIER

View full text Add to dashboard Cite

show abstract

“…[16][17][18][19][20] Thus, IDG MOSFETs are promising for future high-performance and low-power-consumption very large scale integrated circuits. However, one of the identified challenges for IDG MOSFET optimization remains the development of compact models [17][18][19]21,22) taking into account the main physical phenomena (such as short-channel effects, quantum confinement, and ballistic transport) governing the devices at this scale of integration. Modeling the IDG MOSFET operation is a difficult task owing to the effect of the second gate that can be independently switched.…”

Section: Introductionmentioning

confidence: 99%

Quantum Compact Model of Drain Current in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Munteanu

Autran

Moreau

2011

Jpn. J. Appl. Phys.

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A continuous compact model of drain current in independently driven double-gate (IDG) metal–oxide–semiconductor field-effect transistors (MOSFETs) is presented. The model describes drift-diffusion transport and is continuous over all operation regimes, which makes it very suitable for implementation in circuit simulators. Our approach takes into account two-dimensional (2D) electrostatics and vertical carrier quantum confinement in the channel through the inversion charge evaluated quantum-mechanically. The model effectively reproduces the threshold voltage and the current modulation by the back-gate bias, as well as the quantum confinement effects on the inversion charge. A full 2D quantum–mechanical numerical simulation code (solving the 2D Poisson equation self-consistently coupled with the 1D Schrödinger equation) is used to validate the model. The model is shown to fit with good accuracy the numerically simulated quantum drain current in double-gate devices with either independent or connected gates.

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Quantum Compact Model of Drain Current in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Munteanu

Autran

Moreau

2011

Jpn. J. Appl. Phys.

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A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs

Cited by 3 publications

References 25 publications

Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

Quantum Compact Model of Drain Current in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Quantum Compact Model of Drain Current in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

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