Abstract:A continuous compact model of drain current in independently driven double-gate (IDG) metal–oxide–semiconductor field-effect transistors (MOSFETs) is presented. The model describes drift-diffusion transport and is continuous over all operation regimes, which makes it very suitable for implementation in circuit simulators. Our approach takes into account two-dimensional (2D) electrostatics and vertical carrier quantum confinement in the channel through the inversion charge evaluated quantum-mechanically. The mo… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.