Jpn. J. Appl. Phys.
 2011
DOI: 10.7567/jjap.50.024301
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Quantum Compact Model of Drain Current in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Daniéla Munteanu
1
,
Jean‐Luc Autran
2
,
Mathieu Moreau
3
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