2016
DOI: 10.1109/jsen.2015.2501347
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A CMOS Buried Quad p-n Junction Photodetector Model

Abstract: International audienceA buried quad junction (BQJ) photodetector has been designed and fabricated with a high-voltage CMOS process. It implements four vertically-stacked p-n junctions with four different spectral responses. This feature allows high spectral discriminating ability, greater than both conventional buried double junction and buried triple junction detectors. In this paper, we propose a SPICE-like model, based on the physical properties of the device structure. The proposed model has been integrate… Show more

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Cited by 15 publications
(7 citation statements)
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“…The weakness of the MSM structure is the exposed optical receiving area to air, which may suffer from pollutants and surface effect. Junction devices like the Schottky photodiode (SPD) and pn-or pin-junction photodiodes [63][64][65] can avoid the surface effect and be operated at zero bias like a solar cell. For the SPD, the Schottky contact is usually semi-transparent, partially absorbing the incident light.…”
Section: Effect Of Device Structuresmentioning
confidence: 99%
“…The weakness of the MSM structure is the exposed optical receiving area to air, which may suffer from pollutants and surface effect. Junction devices like the Schottky photodiode (SPD) and pn-or pin-junction photodiodes [63][64][65] can avoid the surface effect and be operated at zero bias like a solar cell. For the SPD, the Schottky contact is usually semi-transparent, partially absorbing the incident light.…”
Section: Effect Of Device Structuresmentioning
confidence: 99%
“…The shift toward co-oximetry, also named Multi-Wavelength pulse oximetry [1,54], addresses this limitation and improves overall accuracy. However, an interesting additional alternative could be its association with specific multi-layer Si photodetectors, which are well-known to yield a better spectral discrimination and signal-to-noise ratio than usual photodiodes, without real additional manufacturing costs thanks to their fabrication with standard Complementary Metal-Oxide Semiconductor (CMOS) technologies [55][56][57].…”
Section: Discussionmentioning
confidence: 99%
“…Nonetheless, an array arrangement of several photodetectors could help for the durability and reliability of the implanted device. These sensors could be CMOS buried multi PN junction photodetectors [71,72] in order to enjoy of their multispectral ability and their rejection of certain parasitic signal and noise. Therefore, an ASIC can be designed.…”
Section: Discussionmentioning
confidence: 99%