2012 IEEE 3rd Latin American Symposium on Circuits and Systems (LASCAS) 2012
DOI: 10.1109/lascas.2012.6180360
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A CMOS 25.3 ppm°/C bandgap voltage reference using self-cascode composite transistor

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Cited by 17 publications
(9 citation statements)
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“…The layout is shown in Fig. 1 (c) Table II summarizes the characteristics of our circuit in comparison with its counterparts reported in [1,2,3,5]. Our design is comparable to other circuits in power supply, PSRR, precision, and chip area.…”
Section: Resultsmentioning
confidence: 87%
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“…The layout is shown in Fig. 1 (c) Table II summarizes the characteristics of our circuit in comparison with its counterparts reported in [1,2,3,5]. Our design is comparable to other circuits in power supply, PSRR, precision, and chip area.…”
Section: Resultsmentioning
confidence: 87%
“…The gate-bulk voltage of this transistor has a temperature coefficient of ∼ −1.69 mV/ • C [3]. Accurate equations of V BE are developed from…”
Section: Principle Of Second Order Curvature-compensation Circuitmentioning
confidence: 99%
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“…Further information regarding the designed voltage references can be found elsewhere (Colombo et al, 2012;Banba et al, 1999;Ueno et al, 2009 …”
Section: Temperature-compensated Voltage Referencesmentioning
confidence: 99%