A 139 nW, 67  $$\hbox {ppm}/^\circ \hbox {C}$$ ppm / ∘ C BJT-CMOS-Based Voltage Reference Circuit

Chouhan, Shailesh Singh; Halonen, K.

doi:10.1007/s00034-017-0641-3

Cited by 4 publications

(3 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The voltages V PTAT and V CTAT are generally obtained by voltage drops of either forward‐biased PN junction diode, 11–13 base‐emitter junction voltages of the BJTs, 14–29 or gate‐to‐source voltages of subthreshold MOS transistors 30–43 . The first‐order temperature‐compensated voltage reference circuits have been reported in the literature, which are formed by using diodes, BJTs, MOS transistors, or by combination of these devices 11,12,14–17,26,28–41 . The voltage reference circuit presented by Banba et al 11 uses diodes, resistors, and operational amplifier.…”

Section: Introductionmentioning

confidence: 99%

“…The suggested circuit achieves high PSRR by using a frequency compensation technique and cascode current mirrors. Chouhan et al 16 proposed a voltage reference using MOS transistors, BJTs, and resistors which offers low‐power consumption. The voltage reference reported by Cucchi et al 17 uses BJTs, which results in high‐power consumption and increased chip area.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Low temperature coefficient and low line sensitivity subthreshold curvature‐compensated voltage reference

Thakur

Pandey

Kumar

2020

Circuit Theory & Apps

View full text Add to dashboard Cite

Summary A high‐order curvature‐compensated subthreshold voltage reference is proposed in this paper. The proposed curvature‐compensated voltage reference consists of two supply‐independent first‐order voltage references and a curvature compensation circuit. The supply‐independent first‐order voltage reference uses a negative feedback loop which improves the line sensitivity and eliminates the demand of operational amplifier, whereas the curvature compensation circuit provides high‐order temperature‐compensated output reference voltage. The proposed curvature‐compensated voltage reference provides an output reference voltage of 118.54 mV with a temperature coefficient of 21.5 ppm/°C over a wide temperature range of −60°C to 120°C. The power supply rejection ratio and line sensitivity are observed as −68.64 dB (for the frequency range of 1 Hz to 100 Hz) and 0.035%/V (for the supply voltage varies from 0.85 V to 2.5 V), respectively. The values of output noise at the frequencies of 1 kHz and 10 kHz without using any capacitive filter are obtained as 179.13 nV/ √ Hz and 123.87 nV/ √ Hz, respectively.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low temperature coefficient and low line sensitivity subthreshold curvature‐compensated voltage reference

Thakur

Pandey

Kumar

2020

Circuit Theory & Apps

View full text Add to dashboard Cite

show abstract

“…MOSFET has been used in various applications such as differential preamplifier having programmable bandwidth for monitoring neural activities (Chang et al, 2017), sample and hold circuit (Iizuka et al, 2018), pseudo resistors (Puddu et al, 2017), complementary to absolute temperature (CTAT) voltage generator (Chatterjee et al, 2017), variable mirror amplifier (Sutula et al, 2016), field effect transistor-based THz detectors (Kolacinski et al, 2018), diode-connected metal oxide semiconductor field effect transistor (MOSFET) (Chouhan and Halonen, 2017), sampling mixer circuit (Gawalwad and Sharma, 2016), switch current circuits (Tong et al, 2014), zero pole reposition-based voltage gain amplifier (Baghtash and Ayatollahi, 2014), waveform generator for low frequency CMOS micropower applications (Al-Darkazly et al, 2016), etc. Various models have been used for different types of MOSFETs (Rawat et al, 2014a(Rawat et al, , 2014b.…”

Section: Introductionmentioning

confidence: 99%

Extended Kalman filter-based state estimation of MOSFET circuit

Bansal

Majumdar

2019

COMPEL

View full text Add to dashboard Cite

Purpose This paper aims to present the estimation of the output voltage of metal oxide semiconductor field effect transistor (MOSFET) using the extended Kalman filter (EKF) method. Design/methodology/approach The method uses EKF for MOSFET output voltage estimation. To implement the EKF method, the state space model has been obtained using Kirchhoff’s current law and Enz-Krummenacher-Vittoz model of the MOSFET circuit. Findings The proposed method can be used for any mode of MOSFET operation besides near the quiescent point region. The nonlinearity that occurs in the saturation region of MOSFET can also be considered in the proposed method. The proposed method can also be used for a large input signal. Though Kalman filter can be used for the small amplitude input signal, it results in inaccurate estimation due to the linearization of the nonlinear system. Research limitations/implications The method is able to track the parameters when they are slowly changing with time. Originality/value The proposed method presents maximal precision of simulation as the maximal precision of simulation requires modeling of the circuit in terms of device parameters and circuit elements.

show abstract

A Sub-1-V CMOS Voltage Reference with High PSRR and High Accuracy

Thakur

Pandey

Kumar

2022

J CIRCUIT SYST COMP

View full text Add to dashboard Cite

This paper presents a novel sub-1-V CMOS voltage reference with high power supply rejection ratio (PSRR), low line sensitivity, and low supply voltage. CMOS voltage references available in the literature use a self-biased cascode branch consisting of two MOS transistors operating in the subthreshold region to generate the proportional-to-absolute-temperature (PTAT) voltage only, whereas extra circuitry is required to generate the complementary-to-absolute-temperature (CTAT) voltage for temperature compensation. But in the proposed sub-1-V CMOS voltage reference, both the PTAT and CTAT voltages are generated using a single self-biased cascode branch. Two operational amplifiers in negative feedback topology are used to convert the PTAT and CTAT voltages into PTAT and CTAT currents, respectively, which help to enhance the stability and PSRR of the proposed voltage reference. The proposed voltage reference has been designed and simulated in 180-nm standard CMOS technology using Cadence Virtuoso Analog Design Environment. The proposed voltage reference achieves an output reference voltage of 424.85[Formula: see text]mV with a temperature coefficient of 29.5[Formula: see text]ppm/∘C for the temperatures ranging from [Formula: see text]C to 125∘C at a supply voltage of 0.8[Formula: see text]V. A line sensitivity of 0.0035%/V is achieved for the supply voltage varying from 0.8[Formula: see text]V to 5[Formula: see text]V at nominal temperature (27∘C). A PSRR of [Formula: see text]91.69[Formula: see text]dB is observed for the frequencies ranging from 1[Formula: see text]Hz to 10[Formula: see text]kHz at nominal conditions without using any capacitive filter. Also, the output noises of the proposed design at nominal conditions for the frequencies of 1[Formula: see text]Hz and 10[Formula: see text]kHz are obtained as 2.37[Formula: see text][Formula: see text]V/[Formula: see text]Hz and 45.26[Formula: see text]nV/[Formula: see text]Hz, respectively.

show abstract

A 139 nW, 67 $$\hbox {ppm}/^\circ \hbox {C}$$ ppm / ∘ C BJT-CMOS-Based Voltage Reference Circuit

Cited by 4 publications

References 27 publications

Low temperature coefficient and low line sensitivity subthreshold curvature‐compensated voltage reference

Low temperature coefficient and low line sensitivity subthreshold curvature‐compensated voltage reference

Extended Kalman filter-based state estimation of MOSFET circuit

A Sub-1-V CMOS Voltage Reference with High PSRR and High Accuracy

Contact Info

Product

Resources

About