SummaryIn this paper, grounded and floating decremental/incremental memristor emulators have been proposed by using an operational transconductance amplifier (OTA), current differencing buffered amplifier (CDBA), and a grounded capacitor. The proposed memristor emulators are simpler in design over most of the realizations of memristor emulators available in the literature. The proposed configurations of grounded and floating decremental memristor emulators can be easily converted into grounded and floating incremental memristor emulators. The pinched hysteresis loops obtained from proposed memristor emulators are maintained up to 1‐MHz frequency in both decremental and incremental configurations. Simulation results have been obtained using a Mentor Graphics Eldo simulation tool in 0.18‐μm complementary metal‐oxide semiconductor (CMOS) technology parameters. Analog filters have also been designed to verify the performance of proposed grounded and floating memristor emulators.
This paper proposes a novel floating gate MOSFET (FGMOS) based tunable grounded resistor (FGTGR). The FGTGR has been implemented using a single 3-input FGMOS. In the drain current equation of 3-input FGMOS, the gate voltage is equal to the weightedsum of the 3 input voltages, namely V in (input voltage), V C (control voltage), and V b (bias voltage). The input gate voltage (V in ) with appropriate conditions has been used to cancel the nonlinear-term present in the drain current equation of FGMOS operating in the ohmic region. The control voltage V C has been used to control the resistor value and the bias voltage V b has been used to realize either a threshold-dependent or a threshold-independent FGTGR. The FGTGR is simple, compact, accurate, and with low power dissipation of 1.63 lW. The workability of the FGTGR and the high pass filter realized by using the same, have been confirmed by SPICE simulations in 0.5 lm CMOS technology.
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