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In this work, a data-dependent feedback-cutting-based bit-interleaved 12T static random access memory (SRAM) cell is proposed, which enhances the write margin in terms of write trip point (WTP) and write static noise margin (WSNM) by 2.14× and 8.99× whereas read stability in terms of dynamic read noise margin (DRNM) and read static noise margin (RSNM) by 1.06× and 2.6 ×, respectively, for 0.4 V when compared with a conventional 6T SRAM cell. The standby power has also been reduced to 0.93× with an area overhead of 1.49× as that of 6T. Monte Carlo simulation results show that the proposed cell offers a robust write margin when compared with the state-of-the-art memory cells available in the literature. An analytical model of WSNM for 12T operating in subthreshold region is also proposed, which has been verified using the simulation results.Finally, a small SRAM macro along with its independent memory controller has been designed. KEYWORDS circuit design, low-power, SRAM, stability, write ability 2314

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Continuous metalized regenerated cellulose fibers for advanced applications (e.g., multi-functional composites) are produced by electroless copper plating. Copper is successfully deposited on the surface of cellulose fibers using commercial cyanide-free electroless copper plating packages commonly available for the manufacturing of printed wiring boards. The deposited copper was found to enhance the thermal stability, electrical conductivity and resistance to moisture uptake of the fibers. On the other hand, the chemistry involved in plating altered the molecular structure of the fibers, as was indicated by the degradation of their mechanical performance (tensile strength and modulus).

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