A 90-nm logic technology featuring strained-silicon

Reduced electric field in junctionless transistors

“…It has been shown that electron channel mobility in MOSFETs has "historically" decreased from 400 to 300 and 130 cm 2 / V s when migrating from 0.8 to 0.6 and 0.13 m technology nodes, respectively, making it necessary to develop strain silicon technology to keep switching speeds increasing with device size reduction. 3 Without strain technology, the channel mobility in modern MOSFETs would be equal or lower than that in heavily doped silicon ͑100 cm 2 / V s for electrons in N + silicon͒. 4 Recently, a nanowire transistor called the "junctionless transistor" or the "gated resistor" has been introduced.…”

The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs

“…The stress magnitude predicted by simulations of such devices is as high as 600 MPa [4]. This is less than what is obtainable on biaxial strained substrates, where stress magnitudes in excess of 1.4 GPa can be realised, corresponding to strained Si epitaxially grown on a Si 0.8 Ge 0.2 SRB.…”

“…Uniaxial strain induced by silicon nitride (Si 3 N 4 ) contact etch stop layers and source/drain silicon-germanium (SiGe) selective epitaxial growth have made inroads into industrial CMOS processes [2,3]. The stress magnitude predicted by simulations of such devices is as high as 600 MPa [4].…”

“…Si 0.6 Ge 0. 4 SRBs with thicknesses as low as 40 nm to 60 nm were achieved by MBE grown on Si substrates with point defect supersaturation at low growth temperatures [14]. Thicknesses below 100 nm were achieved for SiGe SRBs with Ge percentages as high as 70% [13].…”

Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

“…1 Numerous studies related to the growth of an epitaxial Si 1-x Ge x have been reported, in attempts to improve the hole mobility of p-channel MOSFETs. [2][3][4][5] The selective epitaxial growth (SEG) process is essential for strain engineering, since Si 1-x Ge x should be grown on a particular area (for example, the S/D region) of a device so that the strain is generated in the channel region. 5 The importance of in-depth research on the SEG process is based on its diversity of applications, which includes strain engineering.…”