A 77 GHz T/R MMIC chip set for automotive radar systems

Kamozaki, K.; Kurita, Naoyuki; Hioe, W.; Tanimoto, T.; Ohta, Hiroshi; Nakamura, Takahiro; Kondoh, Hiroshi

doi:10.1109/gaas.1997.628285

Cited by 16 publications

(2 citation statements)

References 5 publications

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“…It used a 130 nm In0.88GaP/In0.4AlAs/ I n0. 4 GaAs mHEMTs. This was grown by MBE on a 650 mm-thick GaAs substrate for in a 77 GHz automotive radar system.…”

Section: ⅳ Conclusionmentioning

confidence: 99%

A CPW-Based 77 GHz Power Amplifier with Cascode Structure Using a 130 nm In_0.88GaP/In_0.4AlAs/In_0.4GaAs mHEMTs

Kim¹,

Koh²,

Park³

et al. 2009

Journal of electromagnetic engineering and science

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In this paper, we present a CPW-based 77 GHz 3-stage power amplifier MMIC for automotive radar systems. The power amplifier MMIC has been realized using a 130 nm In0.88GaP/In0.4AlAs/In0.4GaAs metamorphic high-electron mobility transistors(mHEMTs) technology and an output stage with a cascode configuration. This produced a good output power and gain performance at 77 GHz. The fabricated power amplifier MMIC exhibited a small-signal gain of 18 dB, an output power of 17 dBm and 9 % power added efficiency(PAE) at 77 GHz with a total gate width of 800 μm in the output stage. These performances could be useful to low-cost and small-sized components for 77 GHz automotive radar systems.

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“…It used a 130 nm In0.88GaP/In0.4AlAs/ I n0. 4 GaAs mHEMTs. This was grown by MBE on a 650 mm-thick GaAs substrate for in a 77 GHz automotive radar system.…”

Section: ⅳ Conclusionmentioning

confidence: 99%

A CPW-Based 77 GHz Power Amplifier with Cascode Structure Using a 130 nm In_0.88GaP/In_0.4AlAs/In_0.4GaAs mHEMTs

Kim¹,

Koh²,

Park³

et al. 2009

Journal of electromagnetic engineering and science

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show abstract

“…With an increased awareness and interest in safety issues on vehicular transportation, a variety of obstacle detectors has been researched and developed, among which a forward looking automotive radar has received special attention as it is considered to be an essential element to complete a vehicular safety system [1], [2]. In contrast to infrared or laser based sensors, the major advantage of a millimeter-wave radar system is its excellent performance under adverse weather conditions.…”

Section: Introductionmentioning

confidence: 99%

A W-band MMIC One-Chip Set for Automotive Radar Sensor by using a 0.15μm mHEMT Process

Kang

Hong

Shim

et al. 2006

2006 European Microwave Integrated Circuits Conference

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A monolithic microwave integrated circuit (MMIC) one-chip set consisting of a transmitter and a 8-stage low noise amplifier has been developed for automotive radar sensors at 77 GHz. The chip set was fabricated using a 0.15 gm gate-length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4-inch substrate. The transmitter achieved an output power of 11 dBm at 76.5 GHz with a conversion gain of 6 dB for an input power of 5 dBm and a 38.25 GHz input frequency. The chip size is 5.1 mm x 2.2 mm. The 8-stage low noise amplifier exhibited a gain of 35 dB over a 76 to 77 GHz band with a noise figure of 6 dB. The chip size is 4.1 mm x 2.2 mm. This MMIC one-chip set is suitable for the 77 GHz automotive radar sensors and related applications in a W-band.

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A flip-chip MMIC design with coplanar waveguide transmission line in the W-band

Hirose

Makiyama

Ono

et al. 1998

IEEE Trans. Microwave Theory Techn.

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A 77 GHz T/R MMIC chip set for automotive radar systems

Cited by 16 publications

References 5 publications

A CPW-Based 77 GHz Power Amplifier with Cascode Structure Using a 130 nm In_0.88GaP/In_0.4AlAs/In_0.4GaAs mHEMTs

A CPW-Based 77 GHz Power Amplifier with Cascode Structure Using a 130 nm In_0.88GaP/In_0.4AlAs/In_0.4GaAs mHEMTs

A W-band MMIC One-Chip Set for Automotive Radar Sensor by using a 0.15μm mHEMT Process

A flip-chip MMIC design with coplanar waveguide transmission line in the W-band

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A 77 GHz T/R MMIC chip set for automotive radar systems

Cited by 16 publications

References 5 publications

A CPW-Based 77 GHz Power Amplifier with Cascode Structure Using a 130 nm In0.88GaP/In0.4AlAs/In0.4GaAs mHEMTs

A CPW-Based 77 GHz Power Amplifier with Cascode Structure Using a 130 nm In0.88GaP/In0.4AlAs/In0.4GaAs mHEMTs

A W-band MMIC One-Chip Set for Automotive Radar Sensor by using a 0.15&#x003BC;m mHEMT Process

A flip-chip MMIC design with coplanar waveguide transmission line in the W-band

Contact Info

Product

Resources

About

A CPW-Based 77 GHz Power Amplifier with Cascode Structure Using a 130 nm In_0.88GaP/In_0.4AlAs/In_0.4GaAs mHEMTs

A CPW-Based 77 GHz Power Amplifier with Cascode Structure Using a 130 nm In_0.88GaP/In_0.4AlAs/In_0.4GaAs mHEMTs

A W-band MMIC One-Chip Set for Automotive Radar Sensor by using a 0.15μm mHEMT Process