1998
DOI: 10.1109/22.739211
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A flip-chip MMIC design with coplanar waveguide transmission line in the W-band

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Cited by 50 publications
(9 citation statements)
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“…This LNA MMIC consists of 3-stages InGaP/InGaAs pseudomorphic HEMTs (p-HEMTs), which is fabricated on a semi-insulated GaAs substrate with 0.15-[pm-long T-shaped gate electrode [2], [3]. A schematic cross section of the HEMT is shown in Figure 1.…”
Section: Hemt Structuer and Mmic Designmentioning
confidence: 99%
“…This LNA MMIC consists of 3-stages InGaP/InGaAs pseudomorphic HEMTs (p-HEMTs), which is fabricated on a semi-insulated GaAs substrate with 0.15-[pm-long T-shaped gate electrode [2], [3]. A schematic cross section of the HEMT is shown in Figure 1.…”
Section: Hemt Structuer and Mmic Designmentioning
confidence: 99%
“…According to the finite conductivity of the metal (2. 5 10 S.m for gold metallization) and to the (0.0003) of the GaAs substrate, very high insertion losses are expected when designing such narrow-band filters. These insertion losses can be predicted roughly from (4).…”
Section: Narrow-band Bandpass Filtermentioning
confidence: 99%
“…We must therefore find a compromise between roughness and mechanical strength. In the millimetre and sub-millimetre frequency range coplanar waveguides are more commonly used in the design of circuits (Argarwal et al, 1998), (Haydl et al, 1999), (Hirose et al, 1998), (Papapolymerou et al, 1999). Many studies have, indeed, shown that coplanar waveguides can be considered as a good alternative to microstrip lines in this frequency range (Houdard, 1976), (Hirota & Ogawa, 1987), (Ogawa & Minagawa, 1987), (Brauchler et al, 1996), (Kulke & Wolff, 1996), (Herrick et al, 1998).…”
Section: Introductionmentioning
confidence: 99%