A W-band MMIC One-Chip Set for Automotive Radar Sensor by using a 0.15μm mHEMT Process

Abstract

A monolithic microwave integrated circuit (MMIC) one-chip set consisting of a transmitter and a 8-stage low noise amplifier has been developed for automotive radar sensors at 77 GHz. The chip set was fabricated using a 0.15 gm gate-length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4-inch substrate. The transmitter achieved an output power of 11 dBm at 76.5 GHz with a conversion gain of 6 dB for an input power of 5 dBm and a 38.25 GHz input frequency. The chip size is 5.1 mm x 2.2 mm. The 8-stage low noise amplifier exhibited a gain of 35 dB over a 76 to 77 GHz band with a noise figure of 6 dB. The chip size is 4.1 mm x 2.2 mm. This MMIC one-chip set is suitable for the 77 GHz automotive radar sensors and related applications in a W-band.