GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) 1999
DOI: 10.1109/gaas.1999.803759
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A 77 GHz GaAs pHEMT transceiver MMIC for automotive sensor applications

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Cited by 7 publications
(4 citation statements)
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“…At millimeter-wave frequencies, it results in very good and broadband agreement between simulated and measured S-parameters of a number of coplanar MMICs (e.g. [4]). world", alleviating some technical problems like bond wire parasitic inductance, and additional mounting steps.…”
Section: Coplanar Integrated Circuit Design Made Easiermentioning
confidence: 82%
See 1 more Smart Citation
“…At millimeter-wave frequencies, it results in very good and broadband agreement between simulated and measured S-parameters of a number of coplanar MMICs (e.g. [4]). world", alleviating some technical problems like bond wire parasitic inductance, and additional mounting steps.…”
Section: Coplanar Integrated Circuit Design Made Easiermentioning
confidence: 82%
“…B. 77 GHz transceiver MMIC for collision avoidance radar system A very compact coplanar transceiver MMIC has been developed for an FMCW radar system [4]. Chip area was considerably reduced by the use of cascode FETs.…”
Section: Examples Of High Performancementioning
confidence: 99%
“…Frequencymodulated continuous-wave (FMCW) radar systems have successfully been applied to measure the distance and speed of moving targets for a very long time. In recent years, FMCW radar sensor systems have been employed in a variety of applications: 1) car radar systems, such as short-range radar [2] and long-range radar sensor for intelligent cruise control and collision avoidance; parking; anticollision warning; traffic monitoring; and stop-and-go [3]- [6] in addition to 2) airborne applications, such as commercial and military radar sensor systems with high-resolution sensing and compact system size [7]- [11]. By using a mixer in an FMCW RF module, the received FMCW chirp waveforms can be transformed into sinusoidal waveforms that convey range and angle information.…”
Section: Introductionmentioning
confidence: 99%
“…Figure 1 II. GaAs mHEMT DEVICE CHARACTERISTICS The high electron mobility transistors (HEMTs), especially InP-based InAlAs/InGaAs HEMTs with high cut off frequency and an excellent noise characteristic, are widely used in the front end of satellite communications, radio astronomy, and satellite direct broadcasting receiver systems at microwave and millimeter frequencies [4], [5]. However, it is difficult to use an InP substrate with a diameter of 4 inches or larger, because an InP-based HEMT wafer is more expensive and fragile than a GaAs-based HEMT wafer.…”
Section: Introductionmentioning
confidence: 99%