A 60 to 77 GHz Switchable LNA in an RF-MEMS Embedded BiCMOS Technology

Ulusoy, Ahmet Çağrı; Kaynak, Mehmet; Purtova, Tatyana; Tillack, Bernd; Schumacher, Hermann

doi:10.1109/lmwc.2012.2205562

Cited by 25 publications

(18 citation statements)

References 7 publications

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“…This FOM includes the most relevant parameters for evaluating LNAs for low‐power, high‐gain, low‐noise, and wideband applications. Table is a summary of the implemented 57–81 GHz CMOS LNA, and recently reported state‐of‐the‐art CMOS and SiGe BiCMOS LNAs with operation frequency around 77 GHz in . It is noteworthy that our LNA exhibits both low P DC and one of the lowest NFs and highest FOMs.…”

Section: Measurement Results and Discussionmentioning

confidence: 98%

“…Lately, although several studies have reported excellent 77 GHz (or switchable 60/77‐GHz dual‐band) CMOS and SiGe BiCMOS LNAs , as a whole, the performances of these LNAs are not adequate. For instance, in , a single cascode stage 77–81 GHz LNA in 0.13 µm SiGe BiCMOS process with current‐gain cutoff frequency/maximum oscillation frequency ( f T / f max ) of 230/280 GHz was demonstrated.…”

Section: Introductionmentioning

confidence: 99%

“…Ref. demonstrates a two‐stage cascode 60–77 GHz switchable LNA in 0.25 µm SiGe BiCMOS process with f T / f max of 190/220 GHz. High and flat S 21 of 21.3 ± 1.5 dB was achieved, while its minimum NF of 7.6 dB and P DC of 40 mW still has room for improvement.…”

Section: Introductionmentioning

confidence: 99%

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9.99 mW 4.8 dB NF 57-81 GHz CMOS low-noise amplifier for 60 GHz WPAN system and 77 GHz automobile radar system

Lin

Lee

2015

Microw. Opt. Technol. Lett.

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A low‐power and wideband two‐stage millimeter‐wave low‐noise amplifier (LNA) for 60 GHz wireless personal area network system and 77 GHz automotive radar system using standard 90 nm CMOS technology is reported. T‐match technique is used to achieve simultaneously wideband input and output impedance matching, wideband power gain (S21), and wideband noise figure (NF). The LNA consumes 9.99 mW, achieving S11 better than −−10 dB for frequencies of 57.6–81.8 GHz, and S12 better than −−29.1 dB for frequencies of 10–110 GHz. Additionally, high and flat S21 of 11.2 ± 1.5 dB is achieved for frequencies of 57.9–80.4 GHz, which means the corresponding 3‐dB bandwidth is 22.5 GHz. Furthermore, the LNA achieves minimum NF of 4.8 dB at 76 GHz and NF of 6.2 ± 1.4 dB for frequencies of 76–84 GHz, one of the best NF results ever reported for a CMOS or SiGe BiCMOS LNA with operation frequency around 77 GHz. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:594–600, 2015

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Section: Measurement Results and Discussionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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9.99 mW 4.8 dB NF 57-81 GHz CMOS low-noise amplifier for 60 GHz WPAN system and 77 GHz automobile radar system

Lin

Lee

2015

Microw. Opt. Technol. Lett.

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“…A wideband GaAs RF-MEMS (Dicke) switched LNA design with 3 dB noise figure at 16-26 GHz was presented in [6]. The first and only silicon MEMS LNA ICs operating above 10 GHz that have been reported so far are some narrow-band/dualband (switchable) designs made at 60/77 GHz and 24/74 GHz, respectively [7], [8]. As a result of the unintentionally missing metal via contacts between the Dicke switch and LNA ground planes, the gain of the fabricated MEMS switched LNA design was much lower than expected in the ON state (-4 dB to 2 dB at 24-31 GHz).…”

Section: Summary Of Resultsmentioning

confidence: 99%

“…More recently, some GaAs and silicon based MEMS & switched LNA ICs were presented with an NF of 2-4 dB and 7-8 dB up to 26.5 GHz and 77 GHz, respectively [5]- [8]. The first and only silicon MEMS LNAs operating above 10 GHz that has been reported so far are two narrow-band and dual-band (switchable) www.seipub.org/aime Advances in Microelectronic Engineering (AIME) Volume 3, 2015 2 designs made at 60/77 GHz and 24/74 GHz, respectively [7], [8].…”

Section: Introductionmentioning

confidence: 99%

30 GHz RF-MEMS Dicke Switch Network and a Wideband LNA in a 0.25 µm SiGe BiCMOS Technology

Reyaz

Samuelsson²,

Gustafsson

et al. 2015

Advances in Microelectronic Engineering

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This work presents a novel monolithic integration of a 30 GHz RF-MEMS Dicke switch network and a wideband LNA realised in a 0.25 μm SiGe BiCMOS process. The wideband LNA design has a measured gain of 10-19.9 dB at 2-33 GHz given a DC power consumption (PDC) of 35 mW and a measured noise figure of 5.4-6.3 dB at 14-26.5 GHz when PDC=7.5 mW (the LNA gain is then 10-14.2 dB at 4-26 GHz). The Dicke switch has 3 dB and 22 dB of losses and isolation at 25 GHz. The MEMS switched LNA gain was found to be 10-17 dB lower than anticipated due to some unintentionally missing metal via contacts between the Dicke switch and LNA ground planes. Despite this fact, the MEMS LNA resulted in a measured isolation of 9.0-13.5 dB at 24-31 GHz when the Dicke switch was switched ON and OFF which validates the switching function of the SiGe RF-MEMS wideband LNA design. Such reconfigurable low-power MEMS switched RFICs could be used in highly adaptive broadband receiver front-ends for wireless communication, sensor networks and imaging systems, for example.

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A W-band RF-MEMS switched LNA in a 70 nm mHEMT process

Reyaz

Gustafsson

Samuelsson

et al. 2015

Int J RF and Microwave Comp Aid Eng

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This work presents a monolithic integrated reconfigurable active circuit consisting of a W‐band RF micro‐electro‐mechanical‐systems (MEMS) Dicke switch network and a wideband low‐noise amplifier (LNA) realized in a 70 nm gallium arsenide (GaAs) metamorphic high electron mobility transistor process technology. The RF‐MEMS LNA has a measured gain of 10.2–15.6 dB and 1.3–8.2 dB at 79–96 GHz when the Dicke switch is switched ON and OFF, respectively. Compared with the three‐stage LNA used in this design the measured in‐band noise figure (NF) of MEMS switched LNA is minimum 1.6 dB higher. To the authors’ knowledge, the experimental results represent a first time demonstration of a W‐band MEMS switched LNA monolithic microwave integrated circuit (MMIC) in a GaAs foundry process with a minimum NF of 5 dB. The proposed novel integration of such MEMS switched MMICs can enable more cost‐effective ways to realize high‐performance single‐chip mm‐wave reconfigurable radiometer front‐ends for space and security applications, for example. © 2015 Wiley Periodicals, Inc. Int J RF and Microwave CAE 25:639–646, 2015.

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A 60 to 77 GHz Switchable LNA in an RF-MEMS Embedded BiCMOS Technology

Cited by 25 publications

References 7 publications

9.99 mW 4.8 dB NF 57-81 GHz CMOS low-noise amplifier for 60 GHz WPAN system and 77 GHz automobile radar system

9.99 mW 4.8 dB NF 57-81 GHz CMOS low-noise amplifier for 60 GHz WPAN system and 77 GHz automobile radar system

30 GHz RF-MEMS Dicke Switch Network and a Wideband LNA in a 0.25 µm SiGe BiCMOS Technology

A W-band RF-MEMS switched LNA in a 70 nm mHEMT process

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