A 5291‐ppi organic light‐emitting diode display using field‐effect transistors including a c‐axis aligned crystalline oxide semiconductor

Abstract

C‐axis‐aligned crystalline‐oxide semiconductor field‐effect transistor (CAAC‐OS FET) can be scaled down to a width and a length of 60 nm. We fabricated an organic light‐emitting diode (OLED) display with more than 5000 ppi, which is required in virtual reality (VR) display applications, using CAAC‐OS FETs as the backplane.

55.1: Invited Paper: FMM‐free OLED Manufacturing Enabled by Photolithographic Patterning Processes

“…The overlay between OLED layer and the PDL opening is the Organic Overlap (OO), and the distance between patterned OLED layers is the organic gap (OG). The aperture ratio of the OLED devices is defined as (POW/PP) 2 . The pixel pitch is POW + 2*OO + OG.…”

21‐1: Invited Paper: 5291‐ppi Microdisplay Using CAAC‐IGZO FET with Channel Length of 60 nm

“…We made a prototype of 5291-ppi OLED display using the above CAAC-IGZO FETs [22]. Specifications of the prototyped panel are summarized in Table 1.…”

“…Besides, aiming at expanding the CAAC-IGZO technology to LSI process over a Si substrate, we have worked on scaling CAAC-IGZO FETs and succeed in fabrication of transistors with a channel length on the order of hundreds to several tens nanometers. With use of the scaled CAAC-IGZO FETs, we developed high-definition displays with 2000 ppi and 5000 ppi and reported them at SID Display Week in 2019 [21,22].…”

53.1:Invited Paper:Opportunities and Hurdles for AR and VR Technology

“…The highest cost component in most large field of view (FOV) NTE systems are the imagers, usually followed by the cost of optics. Semiconductor Energy Laboratory Co, Ltd.'s recent demonstration of 5291 ppi active matrices for microdisplays using oxide semiconductors (OS) should potentially resolve several of the most serious issues for NTE headsets once OS backplane microdisplays are mass-produced on large flexible substrates [1,2].…”