Transistor parameter extraction by the conventional transconductance method can lead to a mobility overestimate. Organic transistors undergoing major contact resistance experience a significant drop in mobility upon mild annealing. Before annealing, strong field-dependent contact resistance yields nonlinear transfer curves with locally high transconductances, resulting in a mobility overestimate. After annealing, a contact resistance below 200 Ω cm is achieved, which is stable over a wide V(G) range.

Blue electrophosphorescence in organic light‐emitting diodes (OLEDs) is enhanced by the use of 3,6‐bis(triphenylsilyl)carbazole (see figure). This carbazole derivative with sterically bulky and large‐gap triphenylsilyl groups is an electrochemically and morphologically stable efficient host material for blue electrophosphorescence. When utilized in OLEDs, high efficiencies of up to 16 %, 30.6 cd A–1, and 26.7 lm W–1 are achieved.

High-performance Schottky diodes based on palladium blocking contacts were fabricated upon depositing indium-gallium-zinc oxide (IGZO) with high oxygen content. We find that an oxygen treatment of the palladium contact is needed to achieve low off currents in the Schottky diode, and rationalize this by relating an increased oxygen content at the Pd/IGZO interface to a lower interfacial trap density. Optimized IGZO films were obtained with a record high ratio of free charge carrier density to subgap traps. The rectification ratios of diodes with such films are higher than 107 with current densities exceeding 103 A/cm2 at low forward bias of 2 V.

We investigate the electron and hole mobility in mixed layers of N,N′-di(naphthalen-1-yl)-N,N′-diphenyl-benzidine and bis(2-methyl-8-quinolinato)-4-phenylphenolate aluminum with different mix ratios, using both space-charge limited currents of single-carrier devices with electrically doped charge transport layers and time-of-flight measurements. Both experimental methods yield consistent results. The 1:1 blend shows balanced ambipolar charge carrier transport, which is advantageous for the application as exciton blocking interlayer in hybrid white organic light-emitting diodes: The electroluminescence spectrum is rather stable against changes in interlayer thickness and driving current. Moreover, the external quantum efficiency is enhanced by a factor of 2.5 as compared to a device without interlayer.

A series of compounds containing arylamine and 1,2‐diphenyl‐1H‐benz[d]imidazole moieties are developed as ambipolar, blue‐emitting materials with tunable blue‐emitting wavelengths, tunable ambipolar carrier‐transport properties and tunable triplet energy gaps. These compounds possess several novel properties: (1) they emit in the blue region with high quantum yields; (2) they have high morphological stability and thermal stability; (3) they are capable of ambipolar carrier transport; (4) they possess tunable triplet energy gaps, suitable as hosts for yellow‐orange to green phosphors. The electron and hole mobilities of these compounds lie in the range of 0.68–144 × 10−6 and 0.34–147 × 10−6 cm2 V−1 s−1, respectively. High‐performance, single‐layer, blue‐emitting, fluorescent organic light‐emitting diodes (OLEDs) are achieved with these ambipolar materials. High‐performance, single‐layer, phosphorescent OLEDs with yellow‐orange to green emission are also been demonstrated using these ambipolar materials, which have different triplet energy gaps as the host for yellow‐orange‐emitting to green‐emitting iridium complexes. When these ambipolar, blue‐emitting materials are lightly doped with a yellow‐orange‐emitting iridium complex, white organic light‐emitting diodes (WOLEDs) can be achieved, as well by the use of the incomplete energy transfer between the host and the dopant.

Strong absorption of oligofluorenes at wavelengths of a few commonly used nanosecond pulsed lasers, their bipolar transport characteristics, and high mobilities for both holes and electrons make them useful as the general and effective charge-generation material for the time-of-flight mobility measurement of organic materials. In this letter, we demonstrate the use of the terfluorene as the charge-generation material for measuring hole and electron mobilities of various organic materials. Such a scheme has the advantages of simplifying the instrumentation and reducing material consumption in the measurements.

No abstract

The Internet of Things is driving extensive efforts to develop intelligent everyday objects. This requires seamless integration of relatively simple electronics, for example through ‘stick-on' electronics labels. We believe the future evolution of this technology will be governed by Wright's Law, which was first proposed in 1936 and states that the cost of a product decreases with cumulative production. This implies that a generic electronic device that can be tailored for application-specific requirements during downstream integration would be a cornerstone in the development of the Internet of Things. We present an 8-bit thin-film microprocessor with a write-once, read-many (WORM) instruction generator that can be programmed after manufacture via inkjet printing. The processor combines organic p-type and soluble oxide n-type thin-film transistors in a new flavor of the familiar complementary transistor technology with the potential to be manufactured on a very thin polyimide film, enabling low-cost flexible electronics. It operates at 6.5 V and reaches clock frequencies up to 2.1 kHz. An instruction set of 16 code lines, each line providing a 9 bit instruction, is defined by means of inkjet printing of conductive silver inks.