C‐axis‐aligned crystalline‐oxide semiconductor field‐effect transistor (CAAC‐OS FET) can be scaled down to a width and a length of 60 nm. We fabricated an organic light‐emitting diode (OLED) display with more than 5000 ppi, which is required in virtual reality (VR) display applications, using CAAC‐OS FETs as the backplane.
For high-definition microdisplays with more than several thousands of pixels per inch (ppi), c-axis-aligned crystal indium-gallium-zinc oxide (CAAC-IGZO) field-effect transistors (FETs) are effective devices. Based on such a viewpoint, we have fabricated a 5291-ppi organic light-emitting diode (OLED) display using CAAC-IGZO FETs with a channel length of 60 nm.
C‐axis aligned crystalline oxide semiconductor field‐effect transistor (CAAC‐OS FET) can be scaled down to a width and length of 60 nm. We have fabricated an organic light‐emitting diode (OLED) display with more than 5000 ppi, which is required in virtual reality (VR) displays, by using CAAC‐OS FETs as the backplane.
Statistical considerations have in the past been applied in deriving the optimum thickness for balanced x-ray filters used with fixed-time measurements. Using similar considerations, a criterion has now been formulated which yields the optimum thickness when frxed-count measurements are taken. A double fixed-count method, where separate count totals are used for each filter, is proposed to obtain a near optimum division of counting time. Results quoted include the optimum balanced filter thicknesses for isolating the MoKa and CuKa lines. The construction and performance for the former pair of filters are discussed.
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