A 3-D Integrated Intrachip Free-Space Optical Interconnect for Many-Core Chips

Çiftçioğlu, Berkehan; Berman, Rebecca; Zhang, Jian; Darling, Zach; Wang, Shang; Hu, Jianyun; Xue, Jing; Garg, Ankush; Jain, Manish; Savidis, Ioannis; Moore, Duncan T.; Huang, Michael C.; Friedman, Eby G.; Wicks, G. W.; Wu, Hui

doi:10.1109/lpt.2010.2093876

Cited by 23 publications

(14 citation statements)

References 15 publications

(17 reference statements)

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“…This can be attributed to the availability of commercial multimode fibers that employ VCSELs operating near 850 nm for short-haul communication links in data centers and high-performance computing systems. Further, such VCSELs have shown the potential to play an important role in future high speed optical interconnects and consumer electronics [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling

et al. 2011

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Abstract:We use an empirical model together with experimental measurements for studying mechanisms contributing to thermal rollover in vertical-cavity surface-emitting lasers (VCSELs). The model is based on extraction of the temperature dependence of threshold current, internal quantum efficiency, internal optical loss, series resistance and thermal impedance from measurements of output power, voltage and lasing wavelength as a function of bias current over an ambient temperature range of 15-100 • C. We apply the model to an oxide-confined, 850-nm VCSEL, fabricated with a 9-μm inner-aperture diameter and optimized for highspeed operation, and show for this specific device that power dissipation due to linear power dissipation (sum total of optical absorption, carrier thermalization, carrier leakage and spontaneous carrier recombination) exceeds power dissipation across the series resistance (quadratic power dissipation) at any ambient temperature and bias current. We further show that the dominant contributors to self-heating for this particular VCSEL are quadratic power dissipation, internal optical loss, and carrier leakage. A rapid reduction of the internal quantum efficiency at high bias currents (resulting in high temperatures) is identified as being the major cause of thermal rollover. Our method is applicable to any VCSEL and is useful for identifying the mechanisms limiting the thermal performance of the device and to formulate design strategies to ameliorate them. Vertical-Cavity Surface-Emitting Lasers: Design, Fabrication, Characterization, and Applications, (Cambridge Univ. Press, 1999). 23. C. J. Chang-Hasnain, C. E. Zah, G. Hasnain, J. P. Harbison, L. T. Florez, N. G. Stoffel, and T. P. Lee, "Effect of operating electric power on the dynamic behavior of quantum well vertical-cavity surface-emitting lasers," Appl.

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Section: Introductionmentioning

confidence: 99%

Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling

et al. 2011

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“…Moreover, we believe that in future 3D-integrated circuits with optical interconnects, the presented directional nanoantenna could be used as an "optical via", providing vertical connection between different chip layers. Currently proposed solutions of 3D optical integration involve microlenses and micromirrors [21].…”

Section: Nanoantenna Coupled To the Single Emitter Sourcementioning

confidence: 99%

Novel Directional Nanoantennas for Single-Emitter Sources and Wireless Nano-Links

Klemm

2012

International Journal of Optics

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Optical nanoantennas are emerging as one of the key components in the future nanophotonic and plasmonic circuits. The first optical nanoantennas were in a form of simple spherical nanoparticles. Recently more complex Yagi-Uda nanoantenna structures were demonstrated. These nanoantennas enhance radiation of single emitters and provide well-defined directional radiation. In this contribution, we present the novel design of the directional nanoantenna, which is excited from the propagating mode of the plasmonic waveguide. The nanoantenna design is based on the travelling wave principle, well known at RF/microwave frequencies. By properly designing the propagating parts of the nanoantenna, a very efficient coupling to free space wave impedance can be achieved. Furthermore, the control over the radiation direction and beam width is relatively easy with this nanoantenna. Compared to the previously published Yagi-Uda designs, the new nanoantenna presented in this work has directivity three times higher.

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“…Recently, we proposed an intra-chip optical interconnect for future multi-core processors based on free-space optics and 3-D integrated photonic devices [12,13]. The main objective is to construct an all-to-all communication fabric with high bandwidth density, low latency, and good energy efficiency without routing or switching.…”

Section: Introductionmentioning

confidence: 99%

3-D integrated heterogeneous intra-chip free-space optical interconnect

Çiftçioğlu¹,

Berman²,

Wang³

et al. 2012

Opt. Express

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This paper presents the first chip-scale demonstration of an intra-chip free-space optical interconnect (FSOI) we recently proposed. This interconnect system provides point-to-point free-space optical links between any two communication nodes, and hence constructs an all-to-all intra-chip communication fabric, which can be extended for inter-chip communications as well. Unlike electrical and other waveguide-based optical interconnects, FSOI exhibits low latency, high energy efficiency, and large bandwidth density, and hence can significantly improve the performance of future many-core chips. In this paper, we evaluate the performance of the proposed FSOI interconnect, and compare it to a waveguide-based optical interconnect with wavelength division multiplexing (WDM). It shows that the FSOI system can achieve significantly lower loss and higher energy efficiency than the WDM system, even with optimistic assumptions for the latter. A 1×1-cm2 chip prototype is fabricated on a germanium substrate with integrated photodetectors. Commercial 850-nm GaAs vertical-cavity-surface-emitting-lasers (VCSELs) and fabricated fused silica microlenses are 3-D integrated on top of the substrate. At 1.4-cm distance, the measured optical transmission loss is 5 dB, the crosstalk is less than -20 dB, and the electrical-to-electrical bandwidth is 3.3 GHz. The latter is mainly limited by the 5-GHz VCSEL.

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A 3-D Integrated Intrachip Free-Space Optical Interconnect for Many-Core Chips

Cited by 23 publications

References 15 publications

Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling

Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling

Novel Directional Nanoantennas for Single-Emitter Sources and Wireless Nano-Links

3-D integrated heterogeneous intra-chip free-space optical interconnect

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