3-D integrated heterogeneous intra-chip free-space optical interconnect

Çiftçioğlu, Berkehan; Berman, Rebecca; Wang, Shang; Hu, Jianyun; Savidis, Ioannis; Jain, Manish; Moore, Duncan T.; Huang, Michael C.; Friedman, Eby G.; Wicks, G. W.; Wu, Hui

doi:10.1364/oe.20.004331

Cited by 45 publications

(12 citation statements)

References 20 publications

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“…65,68 Optical interconnects can effectively address the related limitations, such as the electromagnetic crosstalk and signal distortion, while providing a much larger bandwidth. 64,65 VCSELs are considered particularly suitable for shorthaul communication and on-chip interconnects. 36 However, to fully utilize their potential it would be important to explore the paths for their high-frequency operation and achieve a higher modulation bandwidth, limited for conventional lasers to about ∼ 50 GHz.…”

Section: Ultra High-frequency Operationmentioning

confidence: 99%

Toward high-frequency operation of spin lasers

Faria

Lee

et al. 2015

Phys. Rev. B

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Injecting spin-polarized carriers into semiconductor lasers provides important opportunities to extend what is known about spintronic devices, as well as to overcome many limitations of conventional (spin-unpolarized) lasers. By developing a microscopic model of spin-dependent optical gain derived from an accurate electronic structure in a quantum well-based laser, we study how its operation properties can be modified by spin-polarized carriers, carrier density, and resonant cavity design. We reveal that by applying an uniaxial strain it is possible to attain a large birefringence. While such birefringence is viewed as detrimental in conventional lasers, it could enable fast polarization oscillations of the emitted light in spin-lasers which can be exploited for optical communication and high-performance interconnects. The resulting oscillation frequency (> 200 GHz) would significantly exceed the frequency range possible in conventional lasers.

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Section: Ultra High-frequency Operationmentioning

confidence: 99%

Toward high-frequency operation of spin lasers

Faria

Lee

et al. 2015

Phys. Rev. B

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“…(a) Cross-sectional and (b) three-dimensional view of a typical microsystem that consists of electronic (i.e., complementary metal-oxide-semiconductor (CMOS) transceivers and amplifiers), optic (i.e., lenses and mirrors) and photonic (lasers and photodetectors) components with packages [35] (Reproduced with permission from Ciftcioglu et al, Opt. Express; published by OSA, 2012).…”

Section: Electrical and Optical Interfacesmentioning

confidence: 99%

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Howlader

Deen

2015

Photonics

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Abstract:Silicon-based integrated systems are actively pursued for sensing and imaging applications. A major challenge to realize highly sensitive systems is the integration of electronic, optical, mechanical and fluidic, all on a common platform. Further, the interface quality between the tiny optoelectronic structures and the substrate for alignment and coupling of the signals significantly impacts the system's performance. These systems also have to be low-cost, densely integrated and compatible with current and future mainstream technologies for electronic-photonic integration. To address these issues, proper selection of the fabrication, integration and assembly technologies is needed. In this paper, wafer level bonding with advanced features such as surface activation and passive alignment for vertical electrical interconnections are identified as candidate technologies to integrate different electronics, optical and photonic components. Surface activated bonding, superior to other assembly methods, enables low-temperature nanoscaled component integration with high alignment accuracy, low electrical loss and high transparency of the interface. These features are preferred for the hybrid integration of silicon-based micro-opto-electronic systems. In future, new materials and assembly technologies may emerge to enhance the performance of these micro systems and reduce their cost. The article is a detailed review of bonding techniques for electronic, optical and photonic components in silicon-based systems.

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“…It can be assembled upon silicon chip using active or passive alignment technique [23]. Generally, the butt-joint coupling with spot-size converters (SSC) [19], [21] or micro-lens [20] is used to couple lightwave between off-chip devices and waveguides. However, the small alignment tolerance and optical coupling efficiency would be a concern for cost-effective and mass produced chip-level optical interconnects.…”

Section: Introductionmentioning

confidence: 99%

Implementation of Chip-Level Optical Interconnect With Laser and Photodetector Using SOI-Based 3-D Guided-Wave Path

et al. 2014

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A chip-level optical interconnect module combined with a vertical-cavity surfaceemitting laser (VCSEL) chip, a photodetector (PD) chip, a driver integrated circuit (IC), and an amplifier IC on a silicon-on-insulator (SOI) substrate with 3-D guided-wave paths is experimentally demonstrated. Such an optical interconnect is developed for the signal connection in multicore processors or memory-to-processor interfaces. The 3-D guided-wave path, consisting of silicon-based 45 microreflectors and trapezoidal waveguides, is used to connect the optical signal between transmitter and receiver. In this paper, the VCSEL and PIN PD chips are flip-chip integrated on a SOI substrate to achieve complete chip-level optical interconnects. Due to the unique 3-D guided-wave path design, a higher laser-to-PD optical coupling efficiency of À2.19 dB and a larger alignment tolerance of AE10 m for the VCSEL/PD assembly are achieved. The measured laser-to-PD optical transmission efficiency can reach À2.19 dB, and the maximum optical power and threshold current of VCSEL is 3.27 mW and 1 mA, respectively. To verify the data transmission, the commercial driver IC and amplifier IC are assembled upon the silicon chip, and the error-free data transmission of 10 Gbps can be achieved when the VCSEL is operated at the driving current of 9 mA.

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3-D integrated heterogeneous intra-chip free-space optical interconnect

Cited by 45 publications

References 20 publications

Toward high-frequency operation of spin lasers

Toward high-frequency operation of spin lasers

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Implementation of Chip-Level Optical Interconnect With Laser and Photodetector Using SOI-Based 3-D Guided-Wave Path

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