A 3.5V, 1.3W GaAs power multichip IC for cellular phone

A GaAs Power MESFET Operating at 3.3V Drain Voltage for Digital Hand-Held Phone

“…6, can deliver high linear gain. The linear gain of 16.5 dB in this work is much higher than the reported results for MESFET [7] and that for HFET [6], which are 12 dB and 12.7 dB, respectively. It is believed that the power MES-FET developed in this work is quite suitable for the digital cellular phone application because the high gain can deliver a high PAE in the linear operation region of output power and the IP 3 is high enough to obtain a low third-order inter-modulation.…”

“…A linearity figure-ofmerit (LFOM : IP 3 =P DC ) was 45, which is comparable with the state-of-the art LFOM of a HBT (LFOM of 44) [15] and a spike-doped MESFET (LFOM of 50) [16]. The performance of power MESFET developed in this work is better than the previously recorded results in MESFET [7], namely output power of 31.6 dBm and 65% PAE at 3.5V and in heterojunction FET [6], output power of 31.4 dBm and 60% PAE at 3.0V. This paper reports the best power performance, ever achieved with GaAs power FETs at a drain bias in the range of 3.0 3.5V.…”

“…The performances are better than the best results reported for both GaAs power MESFET [7] and pseudomorphic heterojunction FET [6]. Especially, the linearity performance of our low-high doped GaAs power MESFET is high enough to be used as a power amplifying device for digital hand-held phone.…”

Off-state breakdown characteristics of InGaP-based high-barrier gate heterostructure field-effect transistors

“…In addition, because of the large requirement for high-power amplifiers in wireless personal communication systems [3,4], research on the high-breakdown transistors has been strongly motivated. For HBTs, the breakdown characteristics can be improved by using thick or wide bandgap materials as the collector layer [5].…”

Characteristics of GaAs Power MESFETs with Double Silicon Ion Implantations for Wireless Communication Applications

“…Ion-implanted GaAs power metal-semiconductor field-effect transistors (MESFETs) have been studied as to their wireless communication applications [24 -29]. A GaAs power multi-chip integrated circuit using ion-implanted GaAs power MESFETs delivered an output power (P out ) of 1.3 W at 3.5 V for cellular phone communications from 890 to 950 MHz [24]. High-efficiency GaAs power MESFETs with an asymmetrical lightly-doped drain structure gave 32.5-dB output power at 4.7 V for 950-MHz communications [25].…”