A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

Trentzsch, Martin; Flachowsky, S.; Richter, Ralf P.; Paul, J.; Reimer, Benjamin; Utess, Dirk; Jansen, Sören; Mulaosmanovic, Halid; Müller, Stefan; Slesazeck, Stefan; Ocker, J.; Noack, Marko; Müller, Johannes; Polakowski, P.; Schreiter, Jörg; Beyer, Sven; Mikolajick, Thomas; Rice, B.

doi:10.1109/iedm.2016.7838397

Cited by 267 publications

(166 citation statements)

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“…Therefore this discovery has drastically changed the view on ferroelectric memories [19]. Both the scaling of classical capacitor based memories as well as the realization of FeFET based memories seem to be in reach again [20,21] and even the possibility of making classical DRAM non-volatile has been pointed out recently [22,23]. However, in order to apply the unexpected ferroelectric behavior of hafnium oxide to reliable products a number of fundamental questions need to be answered: the origin of the ferroelectric phase, the control of the influencing process parameters, the device and array concepts as well as the degradation under use conditions.…”

Section: Introductionmentioning

confidence: 99%

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

et al. 2017

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Abstract. The discovery of ferroelectric properties of binary oxides revitalized the interest in ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor technology and ferroelectric memories. However, before hitting the markets, the origin of ferroelectricity and in-depth studies of device characteristics are needed. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for a novel, superior device. Therefore, in this paper a holistic modeling approaches which lead to a better understanding of ferroelectric memories based on hafnium and zirconium oxide is addressed. Starting from describing the stabilization of the ferroelectric phase within the binary oxides via physical modeling the physical mechanisms of the ferroelectric devices are reviewed. Besides, limitations and modeling of the multi-level operation and switching kinetics of ultimately scaled devices as well as the necessity for Landau-Khalatnikov approach are discussed. Furthermore, a device level model of ferroelectric memory devices that can be used to study the array implementation and their operational schemes are addressed. Finally, a circuit model of the ferroelectric memory device is presented and potential further applications of ferroelectric devices are outlined.

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Section: Introductionmentioning

confidence: 99%

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

et al. 2017

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“…2,3) Currently, ultrathin HfO 2 films are attainable by atomic layer deposition (ALD) and are already utilized as the major gate stack material for advanced metal-oxide-semiconductor field-effect transistors (MOSFETs) in largely integrated circuits (LSIs). Developments in the fabrication of nonvolatile memories using ferroelectric HfO 2 films are therefore expected to be made in ferroelectric random access memories (FeRAMs), 24,25) ferroelectric gate-FETs (FeFETs), 24,[26][27][28][29][30] and ferroelectric tunneling junctions (FTJs). 31,32) There is a concern that the coercive field (E C ) is close to the breakdown field (E BD ) in ferroelectric HfO 2 films.…”

Section: Introductionmentioning

confidence: 99%

Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

Migita

Ota

Yamada

et al. 2018

Jpn. J. Appl. Phys.

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The electrical properties of ferroelectric Hf-Zr-O ultrathin films, particularly the dependences of remnant polarization, leakage current, coercive field, and breakdown field on the metal composition and film thickness, are systematically examined. Physical analyses show that the Hf-Zr-O films in this experiment consist of polycrystalline grains and contain both ferroelectric and dielectric phases. It is found that changes in metal composition and thickness strongly influence the remnant polarization and the leakage current simultaneously. In contrast, the coercive field was relatively unaffected by these parameters. This particular behavior of the coercive field suggests that the polarization switching in Hf-Zr-O films is predominantly determined by the nature of nanometer-scale ferroelectric domains dispersed in the films.

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“…The dielectric constant of Si:HfO 2 is lower in comparison to its perovskite counterparts (PZT and SBT). This property of Si:HfO 2 provides flexibility to be used in thin films which further reduces fringing effects …”

Section: Device Descriptionmentioning

confidence: 99%

Surface potential–based analysis of ferroelectric dual material gate all around (FE‐DMGAA) TFETs

Mishra

Verma

Gupta

2020

Int J Numerical Modelling

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This paper presents an electrostatic potential–based analytical model of drain current for ferroelectric dual material gate all around tunnel field effect transistors (FE‐DMGAA‐TFETs). Analytical model is formulated to examine the device characteristics by combining the evanescent mode analysis (EMA) and Landau‐Khalatnikov equation. Ferroelectric material exhibits negative capacitance, which enhances the drain current by providing an amplification to the surface potential. The impact of varying the ferroelectric layer thickness on the device characteristics is studied. The accuracy of the model is evaluated by comparing it with the results obtained from numerical calculations and found to be in good accord. The ON current of the ferroelectric‐based TFETs is approximately 100 times the conventional DMGAA‐TFETs.

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A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

Cited by 267 publications

References 3 publications

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

Surface potential–based analysis of ferroelectric dual material gate all around (FE‐DMGAA) TFETs

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