A 25-nm gate-length FinFET transistor module for 32nm node

Chang, Chang-Yun; Lee, Tsung-Lin; Wann, C.; Lai, Li-Shyue; Chen, Hung-Ming; Yeh, Chih-Chieh; Chang, Chih-Hsien; Ho, Chia-Cheng; Sheu, J.Y.; Kwok, T.; Yuan, Feng; Yu, Shao-Ming; Hu, Chaoyang; Shen, Jeng-Jung; Liu, Yi-Hsuan; Chen, Chen-Ping; Chen, Shin-Chih; Chen, Li‐Shiun; Chen, Leo; Chiu, Yu‐Jing; Fu, C.C.; Huang, Mange; Huang, Yu-Jen; Hung, Shih-Ya; Liaw, J.J.; Lin, Hsin-Ying; Lin, H.J.; Lin, Li-Te; Lin, Shyue-Shyh; Mii, Y. J.; Ouyang, Eric; Shieh, Ming-Feng; Su, Chi-Wen; Tai, Shih-Peng; Tao, Hun-Jan; Tsai, Ming-Huan; Tseng, Kai-Ting; Wang, Kin-Weng; Wang, Shiang-Bau; Xu, Jeff; Yang, Fu-Kai; Yang, Sen-Shan; Yeh, Chen-Nan

doi:10.1109/iedm.2009.5424367

Cited by 30 publications

(4 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…FinFET parameters have been tuned to have the best I on and I of f fitting in comparison to experimental results. Table 1 shows a validation of TCAD model vs. the results in [20]. Figure 4 shows I-V characteristics of an IGFinFET with L g =25nm PTM model and TCAD model.…”

Section: Validation Of Predicted Modelmentioning

confidence: 95%

“…Because both PTM-CMG and our TCAD model are based on same experimental results [20], the developed module can be used along with two original PTM-MG libraries i.e. Low STandby Power (LSTP) and High Performance (HP) in circuit simulations.…”

Section: Validation Of Predicted Modelmentioning

confidence: 99%

“…Due to the lack of silicon data for IGFinFET from foundries; we used previously published 25nm CMGFinFET technology node data [20]. We assumed that if effective widths of CMG and IG were the same, I-V characteristics of them would be identical.…”

Section: Development Of Predictive Modelmentioning

confidence: 99%

“…To reduce the simulation time as in [22], we used 2D model instead of 3D model. TCAD model is developed from set of parameters of [13] and experimental data of [20], assuming that if W ef f are the same then I-V characteristic would be identical. FinFET parameters have been tuned to have the best I on and I of f fitting in comparison to experimental results.…”

Section: Validation Of Predicted Modelmentioning

confidence: 99%

See 3 more Smart Citations

Modeling symmetrical independent gate FinFET using predictive technology model

Zarei

Asadpour

Mohammadi

et al. 2013

Proceedings of the 23rd ACM International Conference on Great Lakes Symposium on VLSI

View full text Add to dashboard Cite

Predicting MOSFET models plays a pivotal role in circuit design and its optimization. Independent Gate FinFETs (IGFinFET) are interesting for designers as they are more flexible than Common Multi-Gate FinFETs (CMGFinFET) in digital circuit design. In this work, we implement a model for symmetrical IGFinFET using CMGFinFET model based on Multi-Gate Predictive Technology Model (PTM-MG). This model has been developed from TCAD IGFinFET, based on previously published experimental results of CMGFinFET. Different basic gates in SG (shorted gate), LP (low power), IG (low area), and IG/LP modes have been designed using the implemented model. For LP, IG, and IG/LP NAND gates, the leakage power is reduced by 89%, 26%, and 67%, respectively in comparison to SG. To show that our model does not have any convergence problem for large circuits, we used ISCAS'85 benchmark suite. The results show that for independent gate in high performance PTM-MG library, on average we can save up to 24% in the number of transistors and lower the total power by 42%

show abstract

Section: Validation Of Predicted Modelmentioning

confidence: 95%

Section: Validation Of Predicted Modelmentioning

confidence: 99%

Section: Development Of Predictive Modelmentioning

confidence: 99%