A 2.4–6 GHz Broadband GaN Power Amplifier for 802.11ax Application

Liu, Bei; Boon, Chirn Chye; Mao, Mengda; Choi, Pilsoon; Guo, Ting

doi:10.1109/tcsi.2021.3073345

Cited by 27 publications

(10 citation statements)

References 31 publications

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“…6 and Fig. 7, let 𝑇(𝜔) be the transducer power gain (𝑇𝑃𝐺) of the virtually matched system as specified by (8), which is optimized over the specified normalized angular frequency bandwidth 𝐵 such that 𝐵 = [𝜔 𝑐2 − 𝜔 𝑐1 ].…”

Section: A the Best Transducer Power Gain T(ω)mentioning

confidence: 99%

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A GaN Microwave Power Amplifier Design Based on the Source/Load Pull Impedance Modeling via Virtual Gain Optimization

2022

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Generation of proper source/ load pull impedances for a selected GaN device is essential to design a microwave power amplifier for optimum gain and power-added efficiency. As they are obtained, these impedances may not be realizable network functions over the desired frequency band. Therefore, in this paper, first, we introduce a new method to test if the given source and load impedances are realizable. Then, a novel numerical procedure is introduced to model the source and load pull impedances as realizable network functions, which in turn results in the optimum power intake and power delivering capacity for the GaN transistor used in the design. In the numerical modelling process, a robust tool called "Virtual Gain Optimization" is presented. Numerically generated realizable source and load impedances are modelled analytically. Eventually, these impedances are synthesized using our automatic Darlington Synthesis Robot software to yield the optimum input and output matching network topologies with component values. Examples are presented to test the realizability of the given source/load pull impedance data. Then, the power intake and delivery capacity of the active device are assessed for a 10W-GaN power transistor, namely "Wolfspeed CGH40010F" over 0.8-3.0 GHz bandwidth. Eventually, the power amplifier is designed and manufactured. It is shown that the computed and the measured performance of the amplifier is very close with 10 Watts output power, 11.4 ± 0.6 dB gain and 49% to 76 % power added efficiency.

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Section: A the Best Transducer Power Gain T(ω)mentioning

confidence: 99%

“…For wireless communication systems, it is essential to design power amplifiers (PA) for a variety of applications [1][2][3][4][5][6][7][8][9]. Nowadays, it is a common practice to employ Gallium Nitrate (GaN) transistors due to their high-power delivery capacity [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

A GaN Microwave Power Amplifier Design Based on the Source/Load Pull Impedance Modeling via Virtual Gain Optimization

2022

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“…In the modern wireless communication system, the bandwidth of modulated signal is becoming wider and wider to obtain higher transmission speed, which challenges the broadband design of components in the system, such as antenna 1,2 and power amplifier (PA). 3,4 Meanwhile, the peak-to-average power ratio (PAPR) of widebandmodulated signal is usually high, [5][6][7][8] leading to low efficiency of the stand-alone power amplifier. 9 To improve the efficiency of a PA, envelope-tracking architecture is one of the most promising candidates.…”

Section: Introductionmentioning

confidence: 99%

High‐accuracy filtering‐based envelope generation and digital predistortion for wideband envelope tracking power amplifier

Chen

Zhu

et al. 2022

Int J RF Mic Comp-Aid Eng

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A high‐accuracy filtering‐based envelope generation technique for wideband envelope tracking power amplifiers (ET PAs) is proposed to improve PA efficiency with limited envelope bandwidth. It is achieved by optimizing the envelope generation block by employing three generalized rectification functions. The proposed envelope can be obtained by finding the proper coefficients in these generalized rectification functions. Furthermore, the digital predistortion can be employed to compensate for the nonlinearity and memory effect introduced by the proposed envelope. Experiments have been carried out on an ET system that is operated with the center frequency of 3.5 GHz, which have shown that the proposed technique can improve the PA efficiency by more than 2.2% with only 1.2× the modulated bandwidth compared to the state‐of‐the‐art methods. The normalized mean square error can achieve −44.8 dB, and the adjacent channel leakage ratio can achieve better than −52 dBc. The proposed technique can improve the PA efficiency with limited envelope bandwidth compared to the state‐of‐the‐art techniques, and the PA supplied by the proposed envelope can be linearized well, while it may cost more resources to find the proper coefficients of these three generalized rectification functions.

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“…For wireless communication systems, it is essential to design power amplifiers (PAs) for variety of applications. [1][2][3][4][5][6][7][8] Nowadays, it is a common practice to employ gallium nitrate (GaN) transistors due to their high-power-delivering capacity. [9][10][11][12][13] In practice, PA design process starts with careful selection of the power transistor considering the design parameters such as the required output signal power to be delivered, power added efficiency (PAE) of the amplifier, and transducer power gain (TPG) over the specified bandwidth.…”

Section: Introductionmentioning

confidence: 99%

“…For wireless communication systems, it is essential to design power amplifiers (PAs) for variety of applications 1–8 . Nowadays, it is a common practice to employ gallium nitrate (

GaN

) transistors due to their high‐power‐delivering capacity 9–13 .…”

Section: Introductionmentioning

confidence: 99%

Broadband performance assessment of a microwave power transistor employing the real frequency technique

Kılınç

Ejaz

Yarman

et al. 2022

Circuit Theory & Apps

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Generation of proper source/ load pull impedances for a selected active device is essential to design an RF power amplifier for optimum gain and power added efficiency. As they are obtained, these impedances may not be realizable network functions over the desired frequency band to yield the input and the output matching networks for the amplifier. Therefore, in this paper, first, we introduce a new method to test if a given impedance is realizable. Then, a novel "Real Frequency Line Segment Technique" based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake and power delivery capacity of the amplifier. During the numerical performance assessments process, a robust tool called "Virtual Gain Optimization" is presented. Finally, a new definition called "Power-Performance-Product" is introduced to measure the quality of an active device. Examples are presented to test the realizability of the given source/load pull data and to assess the gain-bandwidth limitations of the given source/load pull impedances for a 45W-GaN power transistor, namely "Wolfspeed CG2H40045", over 0.8-3.8 GHz bandwidth.

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A 2.4–6 GHz Broadband GaN Power Amplifier for 802.11ax Application

Cited by 27 publications

References 31 publications

A GaN Microwave Power Amplifier Design Based on the Source/Load Pull Impedance Modeling via Virtual Gain Optimization

A GaN Microwave Power Amplifier Design Based on the Source/Load Pull Impedance Modeling via Virtual Gain Optimization

High‐accuracy filtering‐based envelope generation and digital predistortion for wideband envelope tracking power amplifier

Broadband performance assessment of a microwave power transistor employing the real frequency technique

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