2022
DOI: 10.1109/access.2022.3174227
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A GaN Microwave Power Amplifier Design Based on the Source/Load Pull Impedance Modeling via Virtual Gain Optimization

Abstract: Generation of proper source/ load pull impedances for a selected GaN device is essential to design a microwave power amplifier for optimum gain and power-added efficiency. As they are obtained, these impedances may not be realizable network functions over the desired frequency band. Therefore, in this paper, first, we introduce a new method to test if the given source and load impedances are realizable. Then, a novel numerical procedure is introduced to model the source and load pull impedances as realizable n… Show more

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Cited by 5 publications
(1 citation statement)
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“…A radio-frequency (RF) power amplifier (PA) is a key component of the wireless system, and its specification directly affects the system's performance [1][2][3]. Of all of these key specifications, linearity and efficiency are the two most important, from a system application perspective [4].…”
Section: Introductionmentioning
confidence: 99%
“…A radio-frequency (RF) power amplifier (PA) is a key component of the wireless system, and its specification directly affects the system's performance [1][2][3]. Of all of these key specifications, linearity and efficiency are the two most important, from a system application perspective [4].…”
Section: Introductionmentioning
confidence: 99%