To investigate the humidity dependency of the specifications for a GaN class-F power amplifier (PA), humidity experiments are conducted in the Vötsch Industrietechnik SC3 1000 MHG environmental test chamber. The experimental results show that the key specifications of the PA, such as the output power and power-added efficiency, the large-signal gain, and the drain current show degradation as humidity increases. The reason for this degradation may be the reduction of the 2DEG mobility density due to surface degradation at AlGaN recess regions caused by diffusion phenomena of Ga, and Al. The results concluded here would be helpful for the PA designers to understand the humidity effects on the key specifications for the GaN class-F PA comprehensively, so that the designers could consider the effects on the design cycle of the compensation circuits in advance.
In order to get the high temperature and humidity characteristics of key specifications for a power amplifier (PA), the degradation of the small-signal gain for a GaN class-AB dual-band PA under different temperature and humidity conditions is investigated experimentally. The experimental results show that the small-signal gain of the GaN class-AB dual-band PA will decrease under high temperature and humidity conditions. The main reasons for this degradation are discussed and analyzed in this paper.
To address the issue of frequency nonlinearity modeling of RF PAs, which is rarely seen in the literature, a BPNN is applied to model the frequency nonlinearity of RF PAs in this paper. The BPNN is used to model the frequency nonlinearity of the RF PA, based on the actual measured S-parameter data at different ambient temperatures. The modeling results show that BPNN shows the advantage of a high accuracy in modeling the frequency nonlinearity of RF PAs. It is expected that a BPNN will also show the advantages of a high accuracy in the modeling process of other RF devices or circuits.
In order to understand the PA's indexes, degradations with respect to the temperature changes before suppressing such degradations or compensating those temperature effects of the PAs. The degradations of the gallium nitride (GaN) PA indexes under different temperature conditions with a fixed relative humidity of 85% are investigated experimentally. The S21, power‐added efficiency (PAE) and output power of the PA degrade with the increase of the temperature. The main reasons for these degradations are discussed and analyzed in this paper. The results presented in the paper can help designers to understand the temperature effects on degradations of GaN PA indexes comprehensively so that the designers could consider the effects in the design cycle of the temperature compensation circuits in advance.
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