2018 IEEE International Solid - State Circuits Conference - (ISSCC) 2018
DOI: 10.1109/isscc.2018.8310258
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A 16Gb/s/pin 8Gb GDDR6 DRAM with bandwidth extension techniques for high-speed applications

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Cited by 18 publications
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“…Another example is memory bus systems such as [6,7], that serve as data channels in very dense parallel buses, where the design cost, power, and absolute delay are more prioritized.…”
Section: Introductionmentioning
confidence: 99%
“…Another example is memory bus systems such as [6,7], that serve as data channels in very dense parallel buses, where the design cost, power, and absolute delay are more prioritized.…”
Section: Introductionmentioning
confidence: 99%
“…The diversity of high-speed I/O standards for DRAM requires an automated way of doing production tests over a variety of channels [1,2,3,4,5,6,7]. DRAM standards, such as DDR4, LPDDR4, GDDR5, and HBM address different application-specific needs in PCs, mobile devices, graphics processors, and artificial intelligence (AI) accelerators, respectively [8,9,10,11], and use different I/O channels whose loss characteristics span a wide variety, as shown in Fig.…”
Section: Introductionmentioning
confidence: 99%