1998
DOI: 10.1109/22.734551
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A 155-GHz monolithic low-noise amplifier

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Cited by 30 publications
(5 citation statements)
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“…InP-based HEMTs with pseudomorphic channel are used for low noise applications at mm-wave frequencies such as passive imaging and radiometry [1] [2]. For application in systems long term reliability is imperative.…”
Section: (K8)mentioning
confidence: 99%
“…InP-based HEMTs with pseudomorphic channel are used for low noise applications at mm-wave frequencies such as passive imaging and radiometry [1] [2]. For application in systems long term reliability is imperative.…”
Section: (K8)mentioning
confidence: 99%
“…But can CMOS operate up to 100 GHz as RF transceivers? Presently, W-band (70-110 GHz), D-band (110-140 GHz), and G-band (140-220 GHz) RF circuits have been demonstrated only by III-V MMICs based on high-performance InP-InGaAs HEMTs or HBTs with cutoff frequencies of GHz and GHz [13], [14]. The and of today's 0.1-m CMOS are about 60 and 90 GHz, respectively [15].…”
Section: Electronic Overheadmentioning
confidence: 99%
“…By far the most challenging designs were the LNAs, and the best LNAs used in these modules represent the state of the art. [6][7][8] The key to realizing these designs at such high frequency and bandwidths is a precise model for the HEMT in the frequencies of interest, and after several iterations we have very good LNAs in both bands.…”
Section: Mmic Designmentioning
confidence: 99%