Reliability of passivated 0.15 /spl mu/m InAlAs-InGaAs HEMTs with pseudomorphic channel

Dammann, M.; Chertouk, M.; Jantz, W.; Köhler, K.; Schmidt, Kai; Weimann, G.

doi:10.1109/relphy.1999.761599

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“…A is a constant related to the maximum allowed degradation of the device characteristic. In [4], the MTTF of MHEMT decreased from 3.8 × 10 8 to 2.3 × 10 6 h when the temperature increased from 85 to 125 • C. Similar phenomena were observed by other studies [15][16][17][18][19][20]. Therefore, it is very important to keep the channel temperature as low as possible in order to maximize the device lifetime.…”

Section: Introductionsupporting

confidence: 78%

Structural effects on heat dissipation in InGaAs MHEMTs

Noh

Ryoo

Jeon

et al. 2013

Semicond. Sci. Technol.

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Since the high thermal resistance of InGaAs metamorphic high electron mobility transistors (MHEMTs) limits their applicability, thermal management should be taken into account when designing the device structure. In this study, structural effects on heat dissipation in InGaAs MHEMTs were carefully investigated and experimentally validated. With an air bridge thickness of 10 μm and a gate pitch distance of 24 μm, the maximum channel temperature in a flip-chip bonded device was noticeably reduced from 132 to 106 • C (i.e. corresponding thermal resistance from 252.17 to 178.14 K W −1). Improved heat dissipation with the proposed structure was experimentally validated using backside-mounted devices by an infrared temperature measurement method.

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