A 1 V, 8 GHz CMOS integrated phase shifted transmitter for wideband and varying envelope communication systems

Hamedi-Hagh, Sotoudeh; Salama, C.A.T.

doi:10.1109/cicc.2003.1249437

Cited by 6 publications

(1 citation statement)

References 14 publications

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“…For the frequency bands around or above 10GHz, research efforts have mainly focused on receivers. Especially, high efficiency MOS power amplifiers (PA's) operating at frequencies around or above 10-GHz have received little attention, and still remain as a challenging RF block [3] [4].…”

Section: Introductionmentioning

confidence: 99%

An 18-GHz, 10.9-dbm fully-integrated power amplifier with 23.5% PAE in 130-nm CMOS

Cao

Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.

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An 18-GHz fully integrated class-E power amplifier with 10.9-dBm saturated output power, and 23.5-% maximum PAE is fabricated in the UMC 130-nm digital CMOS process. At the saturated output, the required input power level is -5dBm and PA consumes 35mA from V DD =1.5V. The amplifier is single-ended and includes a 2-stage pre-amplifier and a driver stage. A mode-locking technique exploiting the instability of driver amplifier is used to improve the drive for the gate of output stage. The mode-locking improves PAE by ~3% and reduces the required input power level by ~6dB to get same output level.

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Section: Introductionmentioning

confidence: 99%

An 18-GHz, 10.9-dbm fully-integrated power amplifier with 23.5% PAE in 130-nm CMOS

Cao

Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.

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20-GHz, 20-dBm pseudo-differential power amplifier in standard 90-nm CMOS

Kawano

Suzuki

Sato

et al. 2008

2008 Asia-Pacific Microwave Conference

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A 24GHz, +14.5dBm fully-integrated power amplifier in 0.18 μm CMOS

Komijani

Hajimiri

Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571)

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Abstract-A 24-GHz +14.5-dBm fully integrated power amplifier with on-chip 50-input and output matching is demonstrated in 0.18-m CMOS. The use of substrate-shielded coplanar waveguide structures for matching networks results in low passive loss and small die size. Simple circuit techniques based on stability criteria derived result in an unconditionally stable amplifier. The power amplifier achieves a power gain of 7 dB and a maximum single-ended output power of +14.5-dBm with a 3-dB bandwidth of 3.1 GHz, while drawing 100 mA from a 2.8-V supply. The chip area is 1.26 mm 2 .

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A 1 V, 8 GHz CMOS integrated phase shifted transmitter for wideband and varying envelope communication systems

Cited by 6 publications

References 14 publications

An 18-GHz, 10.9-dbm fully-integrated power amplifier with 23.5% PAE in 130-nm CMOS

An 18-GHz, 10.9-dbm fully-integrated power amplifier with 23.5% PAE in 130-nm CMOS

20-GHz, 20-dBm pseudo-differential power amplifier in standard 90-nm CMOS

A 24GHz, +14.5dBm fully-integrated power amplifier in 0.18 μm CMOS

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