A 0.25-watt three-stage Q-band MESFET monolithic power amplifier

Yang, Huawei; Herman, R.M.; Angel, K.W.; Chao, Adam; Schindler, Fred; Adlerstein, M.G.; Tajima, Y.; Danzilio, D.

doi:10.1109/gaas.1991.172661

Cited by 6 publications

(1 citation statement)

References 2 publications

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“…The power amplifier presented in this paper is a key component for such millimeter-wave systems. Recently, several monolithic power amplifiers were developed which demonstrated very good RF performance for U-Band applications [ 11- [3]. However, further gain and power enhancement is desired for system implementation.…”

Section: Introductionmentioning

confidence: 99%

A 0.6-watt U-band monolithic MESFET power amplifier

Ho¹,

Pande²,

Phelleps³

et al.

1993 IEEE MTT-S International Microwave Symposium Digest

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A high performance four-stage MMIC power amplifier chip has been developed using 0.3-pm gate-length and molecular beam epitaxial (MBE) MESFET technologies. These power MMIC chips have been combined to constitute a 47 GHz power amplifier with output power of 0.46 watts with associated gain of 16.6 dB. A saturated output power of over 0.58 watts was also achieved at 47 GHz. These results represent the highest reported power and gain at U-band from an MMIC amplifier utilizing a 0.3-pm gate-length MESFET. This amplifier has potential application as a driver for a monolithic doubler to obtain more than 80 mW transmitted power at 94 GHz for W-band system applications.

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Section: Introductionmentioning

confidence: 99%