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Gerasimova, V. I.; Рыбалтовский, А. О.; Chernov, P. V.; Spasskii, D. A.

doi:10.1023/a:1024425830258

Cited by 7 publications

(2 citation statements)

References 21 publications

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“…The next PLE maximum near 6 eV is sometimes ascribed toX 1 A 1 →C 1 B 2 transition of the SO 2 molecule [8]. High-energy peaks located around 8 eV may also correspond to some excited states of sulfur-related molecular species.…”

Section: Discussionmentioning

confidence: 99%

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Electronic and vibrational states of oxygen and sulfur molecular ions inside implanted SiO2 films

Бунтов

Zatsepin

Кортов

et al. 2011

Journal of Non-Crystalline Solids

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Section: Discussionmentioning

confidence: 99%

“…However recent low-temperature photoluminescence (PL) studies of sulfur-loaded silica fiber cores [7,8] reveal a pronounced vibrational structure lying over S-related PL bands. Some of them were attributed to diatomic interstitial S 2 molecule while others to more complex SO 2 .…”

Section: Introductionmentioning

confidence: 99%

Electronic and vibrational states of oxygen and sulfur molecular ions inside implanted SiO2 films

Бунтов

Zatsepin

Кортов

et al. 2011

Journal of Non-Crystalline Solids

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Luminescence of isoelectronically ion‐implanted SiO₂ layers

Salh

Kourkoutis

Schmidt

et al. 2007

Physica Status Solidi (a)

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Scanning electron microscopy (SEM) and cathodoluminescence (CL) in combination with scanning transmission electron microscopy (STEM) have been used to investigate thermally grown amorphous silicon dioxide layers implanted isoelectronically with group IV ions (C+, Si+, Ge+, Sn+, Pb+) as well as with group VI ions (O+, S+, Se+). Besides the main luminescent centers in a‐SiO2 layers: the red R luminescence (650 nm; 1.9 eV) of the non‐bridging oxygen hole centers (NBOHC), the blue B (460 nm; 2.7 eV) and the UV (290 nm; 4.3 eV) band of the oxygen deficient centers (ODC), in ion implanted silica additional emission bands are observed. E.g. in Ge+ implanted layers a huge violet band appears at 410 nm (3.1 eV) increasing with the thermal annealing process due to formation of Ge dimers, trimers or higher aggregates, finally leading to destruction of the luminescence centers by further growing to Ge nanoclusters. The Ge cluster size is shown by STEM cross section micrographs. Generally, group IV element implantation and partial substitution of silicon increases the luminescence in the blue/violet region whereas group VI elements and additional oxygen increase the intensity in the red region, confirming the association of the blue and the red luminescence with oxygen deficient centers and oxygen excess centers, respectively. Thus, the cathodoluminescence spectra of sulfur and oxygen implanted SiO2 layers under special conditions show besides the characteristic luminescence bands a multimodal structure beginning in the green region at 500 nm and extending up to the near infrared region at 820 nm. The energy step differences of the sublevels amount in the average 120 meV and indicate vibronic‐electronic transitions, probably of O2– interstitial molecules. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Transition properties of the X3Σ–g, A′3Δu, A3Σ+u, B′′3Πu, B3Σ–u, and B′3Πg states of sulphur dimer

Xing

Shi

Sun

2020

Journal of Quantitative Spectroscopy and Radiative Transfer

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Untitled

Cited by 7 publications

References 21 publications

Electronic and vibrational states of oxygen and sulfur molecular ions inside implanted SiO2 films

Electronic and vibrational states of oxygen and sulfur molecular ions inside implanted SiO2 films

Luminescence of isoelectronically ion‐implanted SiO₂ layers

Transition properties of the X3Σ–g, A′3Δu, A3Σ+u, B′′3Πu, B3Σ–u, and B′3Πg states of sulphur dimer

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Untitled

Cited by 7 publications

References 21 publications

Electronic and vibrational states of oxygen and sulfur molecular ions inside implanted SiO2 films

Electronic and vibrational states of oxygen and sulfur molecular ions inside implanted SiO2 films

Luminescence of isoelectronically ion‐implanted SiO2 layers

Transition properties of the X3Σ–g, A′3Δu, A3Σ+u, B′′3Πu, B3Σ–u, and B′3Πg states of sulphur dimer

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Luminescence of isoelectronically ion‐implanted SiO₂ layers