New highly sensitive thermoluminescence detectors of universal application on the basis of anion-defect a-Al2O3:C single crystals have been developed. The decisive role of non-stoichiometry in forming luminescence properties of crystals has been ascertained by methods of optical, luminescent and exoemission spectroscopy. Detectors possess the sum total of unique dosimetric properties: sensitivity to gamma radiation 50 times higher than that of LiF:Mg,Ti: low background; dose threshold about 10-6 Gy; a single glow peak at 460 K; blue luminescence band at 420 nm; negligible fading and possibility of re-use without annealing procedures.

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By means of a computer simulation the self-consistent charge transport with the current densities j(x,t), the respective charges ρ(x,t), field strengths F(x,t), and potential distributions V(x,t) in SiO2 layers are obtained as a function of the insulator depth x and the injection time t. The SiO2 layers are considered as open layers on silicon substrate or they are embedded in metal-oxide-semiconductor (MOS) structures. The given currents of primary electrons, the field-dependent ballistic currents of secondary electrons and holes as well as the Fowler–Nordheim injection of electrons from the substrate into the dielectric layer are taken into account. This method allows a defined charge storage and the explanation of complicated emission, charging-up, and breakdown processes within insulating layers during electron bombardment and/or high-field charge injection from adjacent electrodes, e.g., in MOS structures.

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