Electronic and vibrational states of oxygen and sulfur molecular ions inside implanted SiO2 films

Interference effects in the UV(VUV)-excited luminescence spectroscopy of thin dielectric films

“…In order to test the applicability of the correction techniques in the case of low-contrast fringes, different spectra of ion-implanted samples were studied. SiO 2 :S + films (Buntov et al, 2011) are known to contain molecular species (S 2 and SO 2 molecules) which have visible PL bands along with several UV-and VUV-excitation maxima (Fig. 10a).…”

“…During photoluminescent studies of SiO 2 films implanted with Si, C, S and Sn ions carried out at DESY (beamline I, SUPERLUMI station), unusual excitation spectra containing a series of regularly spaced bands (oscillations) of similar widths were observed (Zatsepin et al, 2009(Zatsepin et al, , 2012aBuntov et al, 2011). It was hypothesized that the origin of these bands was related to interference effects that may occur for the incident electromagnetic waves in films with thicknesses close to the wavelength.…”

Defects and localized states in silica layers implanted with lead ions

“…The peculiarities of modification of the SiO 2 implanted with IV and VI group ions and properties of point defects formed during implantation were studied in our previous papers: [13,14] (Si + ions), [15] (Ge + implantation), [16] (Sn + bombardment), [17,18] (selenium ions) and [19] (sulfur). The present article is devoted to the study of the energy structure of luminescence centers in the silica films and glasses implanted with lead ions by means of low-temperature time-resolved photoluminescence excited by synchrotron radiation pulses.…”