2014
DOI: 10.1016/j.jlumin.2014.05.031
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Defects and localized states in silica layers implanted with lead ions

Abstract: The luminescence of silica films and glasses implanted with Pb + ions was studied by means of time-resolved photoluminescence spectroscopy under synchrotron excitation. The ion-modified silica layers are "metal-dielectrics" composites the oxide part of which is represented by amorphous micro-heterogeneous phase with variable Pb 2+ ions. Two groups of emission centers are identified: such as: (1) radiation-induced oxygen-deficient centers (ODCs) and non-bridging oxygen atoms (NBOs) in the SiO 2 matrix and (2) l… Show more

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“…Em/Ex around 540/320nm also was observed in 0.25PbO0.75SiO 2 glass and is associated to 6p MBO 2p (MBO is the designation to metal bridging oxygen Pb-O-Pb) [14]. Emission around 370nm attributed to silica ODC also is observed in lead ion-implanted silica films [15], but the excitation spectrum not meet with the 290nm observed in our sample. The Fig 1b shows the Em/Ex mapping of Sb doped silica glass, in which broad emission bands around 375, 630 and 800nm can be observed.…”
Section: Resultscontrasting
confidence: 64%
“…Em/Ex around 540/320nm also was observed in 0.25PbO0.75SiO 2 glass and is associated to 6p MBO 2p (MBO is the designation to metal bridging oxygen Pb-O-Pb) [14]. Emission around 370nm attributed to silica ODC also is observed in lead ion-implanted silica films [15], but the excitation spectrum not meet with the 290nm observed in our sample. The Fig 1b shows the Em/Ex mapping of Sb doped silica glass, in which broad emission bands around 375, 630 and 800nm can be observed.…”
Section: Resultscontrasting
confidence: 64%